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Showing 1 to 8 of 8 for “"group IV semiconductors"”.
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Electrically active defects in novel Group IV semiconductors.
… electrical characterisation of defects in novel group IV semiconducting materials: semiconducting diamond and silicon germanium (SiGe) virtual substrates. Several methods to clean diamond surfaces are introduced, which lead to the fabrication of a diamond Schottky diode with acceptable …
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Quantum confinement effects on light absorption in Germanium for solar energy conversion
… with a rate that will soon become unsustainable given the current exploitation of energy sources (such as fossil fuels). In addition, it should be figured out that most of commonly used energy resource are limited and that humankind has liberated a quantity of carbon (as CO2) in the past 250 years …
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Auger-mediated processes and photoluminescence in group iv semiconductor nanostructures
Group IV semiconductors (Si, Ge) are inefficient light emitting materials due to their indirect bandgap structure. Nanostructures of Si, Ge, and SiGe however, have shown relatively high photoluminescence (PL) quantum efficiency (QE) at low carrier concentrations. At higher carrier concentrations, …
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Topics in the theory of semiconductors: I. Novel semiconductors II. Uniaxial stress dependence of deep impurities
… the electronic energy band structures of novel semiconductors and chapter 4 deals with the uniaxial stress dependence of deep substitutional impurity levels in semiconductors. Chapter 1: The electronic energy band structure and deep substitutional impurity levels for metastable are predicted …
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Study the structural properties of Ge nanoparticles formed by ion implantation and thermal annealing in nitride-base dielectric matrices
… and x-ray absorption spectroscopy (XAS). The motivation for this research is that NPs synthesized from Group IV semiconductors, including Ge, show potential for novel electronic and optoelectronic devices. Ge was chosen as the material for this study, mainly due to its very large bulk exciton …
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Study the structural properties of Ge nanoparticles formed by ion implantation and thermal annealing in nitride-base dielectric matrices
… and x-ray absorption spectroscopy (XAS). The motivation for this research is that NPs synthesized from Group IV semiconductors, including Ge, show potential for novel electronic and optoelectronic devices. Ge was chosen as the material for this study, mainly due to its very large bulk exciton …
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Germanium tin nanowires: synergy at the nanoscale
The race to create alternative, Si compatible, scalable, tuneable device materials over the past number of years has led to a focus on group IV elements. Alloying group IV semiconductors, such as Ge or Si with group IV metals such as Sn and Pb, can lead to direct bandgap semiconductors, as in III-V …
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Ion Beam Synthesis and Irradiation for Si-Based Photonic Materials and Nuclear Waste Management
… Advances in electronics and telecommunications drive the need for Si-based optical materials (group IV alloys) with tunable bandgaps, and for strategies to overcome fabrication challenges. Ion implantation and annealing were used to incorporate Ge and Sn into Si (2.5 – 10 × 10¹⁶ Ge/cm²; 5 ×10¹⁴ – …