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Initial stages of interface formation between group III, IV, and V elements and Si and Ge surfaces

Rich, Daniel Hershel2011

… stages of interface formation between various group III, IV, and V adsorbates and the Si and Ge surfaces have been examined with high resolution angle-integrated and angle-resolved photoemission spectroscopy using synchrotron radiation. The Si 2p and Ge 3d surface-shifted core level components …

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