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Showing 1 to 10 of 10 for “"germanium-silicon"”.

  1. Quantitative Electron Microscopy Studies of Silicon Germanium/silicon(001)

    Over the last decade, much progress has been made in understanding the thermodynamic and kinetic properties of self-assembled quantum dot structures. These structures form as a result of the strain energy in mismatched epitaxial systems. Ge/Si(001) has been investigated for its potential importance …

    uiuc Repository record for Quantitative Electron Microscopy Studies of Silicon Germanium/silicon(001) (opens in a new tab)

  2. Photoemission spectroscopy of germanium surfaces, interfaces, and germanium-silicon systems

    … surface sensitivity were used to study several germanium surface and interface systems: the clean Ge(100)-(2xl) surface, the Ge(100)-Ag interface, and silicon-germanium systems. For the clean Ge(100)-(2xl) surface, both angle-integrated and angle-resolved measurements reveal a component of the …

    uiuc Repository record for Photoemission spectroscopy of germanium surfaces, interfaces, and germanium-silicon systems (opens in a new tab)

  3. Computer aided floating zone growth of Germanium-Silicon crystals in a resistance heated multi-zone furnace

    In this work a technologically state-of-the-art growth furnace <br>-- the FMF-module (Floating Zone Furnace with Rotating Magnetic <br>Field) -- is under development for crystal growth experiments on <br>the International Space Station. By using global simulations and <br>the inverse modeling …

    freiburg-diss Repository record for Computer aided floating zone growth of Germanium-Silicon crystals in a resistance heated multi-zone furnace (opens in a new tab)

  4. n-type silicon-germanium based terahertz quantum cascade lasers

    … THz QCLs use III–V compound semiconductors, but silicon (Si)-based devices could offer significant benefits. The high thermal conductivity of Si may allow higher operating temperatures, removing the need for large and costly cryogenic coolers, and the non-polar nature of Si may allow a wider …

    whiterose Repository record for n-type silicon-germanium based terahertz quantum cascade lasers (opens in a new tab)

  5. EXCESS NOISE STUDIES ON AVALANCHE PHOTODIODES

    … system. The noise above normal shot noise in germanium, silicon, and indium-gallium-arsenide avalanche photodiodes was studied as a function of temperature and wavelength over their photosensitive range. Noise spectra in the frequency range 0.01-10 kHz exhibited considerable 1/f type noise at …

    sask Repository record for EXCESS NOISE STUDIES ON AVALANCHE PHOTODIODES (opens in a new tab)

  6. Floating gate engineering for novel nonvolatile flash memories

    … technology using continuous highly doped polysilicon as floating gate, which is the most common in today’s commercial market, can't satisfy these demands, with the transistor size continuously scaling down beyond 32 nm. Nanocrystal floating gate flash memory and SONOS-type flash memory are …

    texas Repository record for Floating gate engineering for novel nonvolatile flash memories (opens in a new tab)

  7. Selective epitaxial growth techniques to integrate high-quality germanium on silicon

    High-quality Ge-on-Si heterostructures have been actively pursued for many advanced applications, including near-infrared photodetectors, high-mobility field effect transistors, and virtual substrates for integrating III-V multijunction solar cells. However, growing epitaxial Ge on Si poses many …

    unm Repository record for Selective epitaxial growth techniques to integrate high-quality germanium on silicon (opens in a new tab)

  8. Monte Carlo Simulation Of Hole Transport And Terahertz Amplification In Multilayer Delta Doped Semiconductor Structures

    Monte Carlo method for the simulation of hole dynamics in degenerate valence subbands of cubic semiconductors is developed. All possible intra- and inter-subband scattering rates are theoretically calculated for Ge, Si, and GaAs. A far-infrared laser concept based on intersubband transitions of …

    ucf

  9. Role of sulfur in vibration spectra and bonding and electronic structure of GeSi surfaces and interfaces

    … structure of surfaces and interfaces using germanium. Initially, we investigated the H2S and H2Opassivated germanium surfaces. A supercell approach is used with the local density (LDA), generalized gradient (GGA) approximations and van der Waals (vdW) interactions. The frozen phonon method …

    cork Repository record for Role of sulfur in vibration spectra and bonding and electronic structure of GeSi surfaces and interfaces (opens in a new tab)

  10. LARGE-AREA, WAFER-SCALE EPITAXIAL GROWTH OF GERMANIUM ON SILICON AND INTEGRATION OF HIGH-PERFORMANCE TRANSISTORS

    Building on a unique two-step, simple MBE growth technique, we have investigated possible dislocation locking mechanisms by dopant impurities, coupled with artificially introduced oxygen. In the case of n-type Ge grown on Si, our materials characterization indicates that the dislocation density …

    unm Repository record for LARGE-AREA, WAFER-SCALE EPITAXIAL GROWTH OF GERMANIUM ON SILICON AND INTEGRATION OF HIGH-PERFORMANCE TRANSISTORS (opens in a new tab)