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Showing 1 to 1 of 1 for “"gate oxide stability"”.
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Electrical Integration of SiC Power Devices for High-Power-Density Applications
… under elevated temperatures. Meanwhile, the gate oxide stability of the device - a known issue to SiC MOSFETs in general - is also evaluated through both high-temperature gate biasing and gate switching tests. Device degradations are observed from these tests, and a design trade-off between …