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Showing 1 to 1 of 1 for “"gate oxide health"”.

  1. In-situ impedance characterization for assessing SiC MOSFETs reliability

    … confirm that on-state resistance correlates with gate-oxide degradation, while bond-wire lift-off leads to a measurable increase in package inductance. The circuit is thus capable of simultaneously tracking both degradation modes. Its performance is validated through extensive experimental setups …

    uiuc Repository record for In-situ impedance characterization for assessing SiC MOSFETs reliability (opens in a new tab)