Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 58 for “"gate dielectric"”.
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Choosing a gate dielectric for graphene based transistors
… optimized. In this thesis, different candidate gate dielectric materials are examined for use in graphene transistors. Evaporated HfO2 is ultimately used as the gate dielectric for graphene field effect transistors (FETs) on six different graphene samples. Two types of graphene were used: …
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HfO2 as gate dielectric on Si and Ge substrate
… at the reduced device size because of its high dielectric constant. HfO_2 films are currently deposited by various techniques. Many of them require high temperature annealing that can impact device performance and reliability. In this research, electrical characteristics of capacitors with HfO_2 …
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Characterization of high-k layers as the gate dielectric for MOSFETs
As the gate oxide thickness of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is continuously scaled down with lateral device dimensions, the gate leakage current during operation increases exponentially. This increase in leakage current raises concerns regarding power consumption …
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GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS
… on the failure mechanisms of ultrathin dielectric gate breakdown during constant voltage stress. It is verified that the dielectric breakdown induce epitaxy (DBIE) plays an important role in the device electrical behavior after breakdown. Our model is helpful in the study of the …
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GATE DIELECTRIC BREAKDOWN PHYSICAL ANALYSIS AND STUDIES -2D MODELING OF BREAKDOWN THERMAL EFFECT
Ultra thin gate oxide reliability has been an important aspect in the sub-micron fabrication process. Structural deformation at the gate oxide is indeed important to understand the soft breakdown (SBD) and hard breakdown (HBD) mechanisms of a narrow channel MOSFET. During HBD or under favorable …
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Design, fabrication, and characterization of germanium MOSFETs with high-k gate dielectric stacks based on the nitride interfacial layers
… the formation of a high quality germanium-dielectric interface remains a serious challenge. High-k dielectrics deposited directly on germanium exhibit poor physical and electrical properties so an interfacial layer is required. Proposed interlayers include GeON, Si, and metal nitrides such …
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Pentacene Based Organic Electronic Devices
… (PMMA) and cross-linked PMMA (cPMMA) gate dielectrics. The electrical characteristics of pentacene-based organic thin-film transistors (OTFTs) using PMMA as the gate dielectric are reported. Uniform pinhole-free and crack-free films of PMMA could be obtained by spin-coating, with a …
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Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies.
Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and …
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Nanoscale BioFETs for ultrasensitive pH and biomolecular detection
… utilizes an atomic layer deposited high-k gate dielectric, aluminum oxide, for increased gate oxide capacitance. A high-k gate dielectric allows for similar electrical gate oxide thicknesses with higher physical oxide thicknesses, which results in lower leakages in fluid. This process is …
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Threshold voltage in pentacene field effect transistors with parylene dielectric
… area in the development of OFETs is the gate dielectric material. In this thesis the organic polymer parylene is studied as a gate dielectric for pentacene OFETs. The three main areas of study were: (1) parylene's performance as a dielectric, (2) possible improvement of OFETs by surface …
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Amorphous silicon thin film transistor as nonvolatile device.
… by extended high-temperature annealing and gate-bias stress. High-performance CMOS-type a-Si:H TFTs can be fabricated with this plasma etching method. Electrical characteristics of a-Si:H TFTs after Co-60 irradiation and at different experimental stages have been measured. The gamma-ray …
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Characterization of ultrathin gate dielectrics and multilayer charge injection barriers
… a simultaneous reduction in the thickness of the gate dielectric, SiO_2, of a MOSFET. Gate oxides in the ultrathin regime (<35 A) feature a large direct tunneling leakage current. The presence of this leakage current requires a reevaluation of standard characterization techniques as well as a …
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Dielectric reliability in GaN metal-insulator-semiconductor high electron mobility transistors
… obstacles, one of which is Time-Dependent Dielectric Breakdown (TDDB) of the gate dielectric. Under prolonged electrical stress, the gate dielectric suffers a catastrophic breakdown that renders the transistor useless. Understanding the physics behind gate dielectric breakdown and …
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Initial oxidation of zirconium : chemistry, atomic structure, transport and growth kinetics
… redox based resistive switching memory devices, gate dielectric for metal oxide semiconductor devices, and electrolytes for solid oxide fuel cells ...
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INTERFACE EFFECTS ON NANOELECTRONICS
… fluctuations. Si/SiO<sub>2</sub> is a model gate/gate dielectric for organic thin film transistors, therefore proper characterization and measurement of the effects of the SiO<sub>2</sub>/organic interface on device structures is extremely important. I fabricated pentacene thin film …
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Lattice mismatched compound semiconductors and devices on silicon
… were discussed. Although invariant for different gate dielectric (Al203) thicknesses, the mobility turns out to be strongly dependent on the barrier thickness, gate dielectric/barrier interfacial defect states and carrier density. To understand and quantify this dependence, a theoretical model …
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Selected topics on advanced electron devices and their circuit applications
… (NBTI) in p-MOSFETs with ultra-thin SiON gate dielectric is reported. By using the fast pulsed method, a fast Dynamic NBTI (DNBTI) component is distinguished from the conventional slow one for the first time. Evidence has been shown that this component is due to trapping and de-trapping of …
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Time dependent dielectric breakdown in novel GaN metal-insulator-semiconductor high electron mobility transistors
… they combine high electron mobility with low gate leakage, increasing efficiency. This comes with the tradeoff of increased reliability concerns to be addressed before the widespread commercialization of GaN MIS-HEMTs. This thesis investigates one failure mechanism found in prototype …
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On the Impact and Growth of Plasma-enhanced Atomic Layer Deposition High- Dielectrics on 2D Crystals
… for establishing ultrathin, high-quality dielectrics to 2D materials. Since ultrathin dielectrics are an essential aspect of future 2D FETs, this challenge has been a persistent bottleneck for the field. </p><p>In this work, the use of plasma-enhanced atomic layer deposition (PEALD) was …
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