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Showing 1 to 1 of 1 for “"gamma-irradiated silicon"”.

  1. Recombination lifetimes in gamma-irradiated silicon

    … were measured as a function of temperature in silicon before and after irradiation at room temperature by cobalt 60 gamma rays. The resistivity of the boron doped samples ranged between 10 and 5000 ohm-cm, and the resistivity of the phosphorus doped samples was between 20 and 220 ohm-cm. Both …

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