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Showing 1 to 20 of 29 for “"gallium oxide"”.
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Growth and characterization of epitaxial gallium oxide films
The scientific key question of this thesis is to develop the growth processes of MOVPE-grown (100) β-Ga2O3 films to fulfill the requirements of vertical devices. An in-depth study has been performed to develop the process of growing µm-level thick films with excellent electrical properties in terms …
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Metal-assisted chemical etching of β-gallium oxide
β-Ga2O3, with an ultra-wide bandgap (UWB) of ~ 4.6 – 4.9 eV and bulk substrate availability, has drawn enormous interest in the power electronics community. Fabricating high-aspect-ratio β-Ga2O3 3D nanostructures without surface damage is essential for next-generation power electronics. …
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Epitaxial Gallium Oxide Heterojunctions for Vertical Power Rectifiers
… that of narrow band gap materials such as Si and gallium arsenide. Wide bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) with EG 3.3 eV and 3.4 eV, respectively, have emerged within the power electronics field to offer increased breakdown voltages (VBR) at lower …
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Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of 4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this ultra-wide bandgap is the high-temperature stability due to the low intrinsic carrier …
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Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes
Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of 4.5–4.9 eV, which is higher than the bandgap of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this wide-bandgap is the high critical electric field of Ga2O3, which is estimated to be from 5 …
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Metal-assisted chemical etching of β-gallium oxide and its device applications
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2024-12-01
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First Demonstration of beta-phase Gallium Oxide Optical Waveguide in Visible-UV Spectrum
We report the first demonstration of beta-phase gallium oxide (β-Ga2O3) as optical waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). Their propagation losses in the visible spectrum were comprehensively studied via experiments and simulations of the finite …
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Electro-Thermal Device-Package Co-Design for a High-Temperature Ultra-Wide-Bandgap Gallium-Oxide Power Module
… primarily silicon carbide (SiC) and gallium nitride (GaN), have been adopted for use in these applications, but exhibit a degradation in performance at elevated temperatures. As such, gallium oxide (Ga2O3), an ultrawide-bandgap (UWBG) material with controllable doping and the …
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The recovery of gallium from a Virginia feldspar ore
A method of extracting gallium from a Virginia feldspar has been determined. The steps in this method are: 1. Grinding of the ore to a very small particle size (200 mesh) 2. Extraction of gallium by “leaching” the ore with sodium hydroxide 3. Acidification of the sodium hydroxide solution with …
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Unleashing the potential of ULPING: synthesis and property tuning of opto-electronic materials
… materials. Silicon, Gold-coated silicon, and gallium oxide were chosen as substrates, revealing diverse nanostructure morphologies upon parameter modulation. Opto-electronic characterization showcased amplified band gaps across all materials, harmonizing with the newly formed nanostructures. …
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In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system
… the surface reaction, in situ ALD of aluminum oxide (A1₂O₃) on GaAs in MOCVD system was proposed. Isopropanol (IPA) was chosen as the oxygen source for A1₂O₃ ALD and the mechanism was investigated. Pure A120 3 thin film was obtained and no arsenic or gallium oxide was observed at the interface. …
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Investigation of new semiconductor materials for wide band-gap devices
… properties of wide bandgap III-nitride and gallium oxide semiconductor materials using scanning electron microscopy techniques. The primarily used techniques used here were wavelength dispersive X-ray spectroscopy (WDX) and cathodoluminescence (CL) with other electron microscopy and …
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Aromatization of alkenes by gallium/H-ZSM-5 zeolite catalysts
Gallium/H-ZSM-5 zeolite catalysts have been extensively researched for the aromatization of liquified petroleum gas (LPG). In 1989 BP and UOP collaborated to commission a pilot plant in Grangemouth, Scotland, for the aromatization of propane and butane. This plant, based on a technology called the …
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Growth and Characterization of (InGa)2O3 Alloys
… use as wide bandgap semiconductors. Wide bandgap oxides are receiving attention as their properties are conducive to improved power and high breakdown devices. The indium gallium oxide alloy makes it one of the candidates that can be used in heterostructures in which the electrical and optical …
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Thermally Aware Design Approaches for High Power Density Ultra-Wide Bandgap Power Electronics
… bandgap (UWBG) semiconductors like β-type gallium oxide (β-Ga2O3) show promise for the development of next-generation high power density electronics devices such as RF and power electronics. The large bandgap (4.8 eV), high breakdown fields (8 MV/cm), and excellent thermal stability of …
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Computational study of advanced semiconducting materials for next-generation electronic devices
… advanced semiconducting materials such as indium gallium arsenide (InGaAs) and gallium oxide (Ga2O3), mainly for their superior electronic properties compared to traditional semiconductors. However, a series of major challenges need to be overcome in order for these materials to live up to their …
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Laser-induced forward transfer techniques for printing functional materials and photonic devices
… solid-phase ceramic materials namely gadolinium gallium oxide (Gd-Ga-O) and ytterbium doped yttrium aluminium oxide (Yb:YAG). The dependence of the distance travelled by the shockwave and the ejected donor material, their velocities and the quality of the ejected donor pixel on the laser fluence, …
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