Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 6 of 6 for “"gallium nitride high-electron-mobility transistors"”.
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Advanced Processing Techniques for Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors
… the research undertaken in this dissertation highlights the potential of GaN-based transistors for next generation millimeter-wave applications, and possibly digital applications.
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Packaging of Enhancement-Mode Gallium Nitride High-Electron-Mobility Transistors for High Power Density Applications
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are favored for their smaller specific on-resistance, lower switching losses, and higher theoretical temperature limits as compared to traditional silicon (Si) power switches. They have the potential to dramatically increase the power …
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Ohmic Metallizations to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors: Electrical and Microstructural Studies
"Major findings of this work include: (1) Elucidated the interfacial reactions between Al, Ti, AlTi alloy, and Ti/Al/Mo/Au on GaN. (2) Explained the electrical performance of Ti/Al/Mo/Au on AlGaN/GaN based on microstructural investigations. Proposed a ""spike"" mechanism. (3) Identified the role of …
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Advanced Process Development for Contacts to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors (Hemts)
… used to propose fabrication schemes for novel high speed self-aligned and non-self-aligned AlGaN/GaN high electron mobility trasistors (HEMTs) employing Ir/Pt/Au or Ni/Au gate and non-alloyed ohmic contact metallizations.
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Gallium nitride high electron mobility transistors in chip scale packaging: evaluation of performance in radio frequency power amplifiers and thermomechanical reliability characterization
Wide bandgap semiconductors such as Gallium Nitride (GaN) have many advantages over their Si counterparts, such as a higher energy bandgap, critical electric field, and saturated electron drift velocity. These parameters translate into devices which operate at higher frequency, voltage, and …
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Design/System Technology Co-optimization of Gallium Nitride High Electron Mobility Transistors for Next-G 3DIC Heterogeneous Integration of Gallium Nitride and Si CMOS
… use of mmWave and subterahertz RF front ends and transistors. Gallium Nitride (GaN) transistors have continued to push the limits of high-power density, high frequency semiconductor devices. The future of GaN radio frequency (RF) circuit technology is at the intersection of device engineering, …