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Showing 1 to 2 of 2 for “"gallium arsenide-silicon"”.
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X-ray studies of gallium arsenide-silicon heterostructures
Gallium arsenide-silicon heterostructures combine complementary electronic and structural properties to greater technological potential. The large 4% mismatch in lattice parameter between the two semiconductors strongly affects disorder within the film and at the interface. We employ x-ray …
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Theoretical Studies of High Field, High Energy Transport in Gallium-Arsenide, Silicon and Heterostructures
The study of high field transport has been instrumental to the theory of many semiconductor devices based on, e.g., the Hilsum-Ridley-Watkins mechanism, impact ionization phenomena, and recently real space transfer. It will become even more important as device sizes approach submicron dimensions. …