Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 271 for “"gallium arsenide"”.
-
Manganese diffusion in gallium arsenide, aluminum gallium arsenide, and gallium arsenide-aluminum gallium arsenide heterostructures
While Zn, Be, C, and Mg have been commonly used as p-type dopants in GaAs, Mn has not due to reports for which the data has demonstrated non-uniform diffusion, low surface concentration and the degradation of GaAs surface associated with Mn diffusion. A Mn concentration of 2 $\times$ 10$\sp{18}$ …
-
Indium Gallium Arsenide-Gallium Arsenide-Aluminum Gallium Arsenide Strained-Layer Lasers and Laser Arrays
Several characteristics of In$\sb{x}$Ga$\sb{1-x}$As-GaAs-Al$\sb{y}$Ga$\sb{1-y}$As separate confinement heterostructure strained-layer quantum well lasers are investigated in this work. The main implications of strain are examined briefly, including the importance of a critical layer thickness, …
-
Reliability and Mode Behavior of Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum Well Heterostructure Lasers
Data are presented on ten-stripe AlxGa1-xAs-GaAs-In yGa1-yAs quantum well heterostructure edge-emitting lasers showing results of stochastic recoupling of the laser at the Fabry-Perot interface. Scattering by epoxy or oil embedded with Al2O3 polishing compound or 10-mum diameter Al powder results …
-
Growth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices
Described in this thesis are the molecular beam epitaxial growth and characterization of GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$ films and GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$/GaAs strained layer superlattices. The methods used to reproducibly grow GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$ across its entire …
-
Annealing Studies of Beryllium in Gallium-Arsenide and Gallium Arsenide Phosphide
Made available in DSpace on 2014-12-12T20:54:49Z (GMT). No. of bitstreams: 1 7811267.pdf: 3853791 bytes, checksum: a0f2801cbd42501b2dbbe4b3a6d222d7 (MD5) Previous issue date: 1978
-
Aluminum Gallium Arsenide / Gallium Arsenide Heterojunction Phototransistors for Fiber-Optic Communications
Made available in DSpace on 2014-12-12T20:55:08Z (GMT). No. of bitstreams: 1 8009108.pdf: 3346923 bytes, checksum: da74c95de718b6d1823ca180b76d249e (MD5) Previous issue date: 1979
-
Nitrogen Isoelectronic Traps in Gallium Arsenide Phosphide and Aluminum Gallium Arsenide
Made available in DSpace on 2014-12-12T20:55:11Z (GMT). No. of bitstreams: 1 8009215.pdf: 14760264 bytes, checksum: 3f036ee1b4df72f7e4d97b2045a7536b (MD5) Previous issue date: 1979
-
Lifetime Spectra of Gallium Arsenide-Phosphide and Nitrogen-Doped Gallium Arsenide-Phosphide
Made available in DSpace on 2015-05-12T22:39:10Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7511795.PDF: 4228710 bytes, checksum: b6bf26e7d08a16c7f80c48cf235d52c1 (MD5) Previous issue date: 1974
-
Acceptor Behavior of Implanted Beryllium in Gallium-Arsenide and Gallium Arsenide-Phosphide
Made available in DSpace on 2014-12-12T20:54:22Z (GMT). No. of bitstreams: 1 7624056.pdf: 6487442 bytes, checksum: 2c2f82ebf4bd3de34fb997cc35bb9693 (MD5) Previous issue date: 1976
-
Lifetime spectra of gallium arsenide phosphide and nitrogen-doped gallium arsenide phosphide
Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-18T21:10:02Z No. of bitstreams: 1 1974_lee.pdf: 4550212 bytes, checksum: 90dd9031c1f8520031f387a0967a1e6a (MD5)
-
Electrochemistry of Gallium-Arsenide
Made available in DSpace on 2015-05-12T22:38:50Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7309878.PDF: 3310882 bytes, checksum: 28d84dc2c6a3cc89e5739272a5e57051 (MD5) Previous issue date: 1972
-
Electroreflectance of gallium arsenide
"The electroreflectance spectrum of n-type gallium arsenide in the 1.2 - 5.3 eV photon energy range has been measured. The 6e l and 6e2 l1neshapes of six different critical points were analyzed in detail by fitting the one-electron Frapz-Keldysh-Aspnes theory to each separate critical point …
-
Piezoreflectance of gallium arsenide
The response of the reflectivity spectrum of single crystal GaAs to uniaxial stress in the (001) and (111) directions was determined. Interband transitions were detected at 1.425 t .015, 1.76 t .02, 2.89, 3.12, and 4.5 eVe The two lowest energy transitions are shown compatible with r symmetry, and …
-
Aluminum Gallium Arsenide-Indium Gallium Arsenide Crystal Growth, Buried Tunnel Contact Lasers, Wafer Bonding, and Alluminum Gallium Arsenide Oxide-Based VCSELs
In order to overcome the inherent limitations of epitaxial material grown on a single substrate, wafer bonding has been developed over the last decade and is now introduced to the Solid State Devices Laboratory. Resistors are formed by simply bonding two n-type substrates together in order to …
-
Experimental Studies of Lateral Electron Transport in Gallium-Arsenide - Aluminum-Gallium - Arsenide Heterostructures
The electron-transport characteristics of modulation-doped GaAs-Al(,x)Ga(,1-x)As heterostructures have been measured over a wide range of temperatures using a diverse set of device structures. Short voltage pulses were used to apply a broad range of lateral (parallel to the interface) electric …
-
Growth, Characterization and Application of Aluminum-Gallium - Arsenide/gallium-Arsenide Modulation Doped Heterostructures
Modulation doped heterostructures show great potential for being the basis of a new family of high speed electronic devices, including photodetectors, charge-coupled devices and field effect transistors. This has motivated an extensive study of the growth and physical properties of …
-
Manufacturability of gallium arsenide/aluminum gallium arsenide lasers grown by molecular beam epitaxy
… growth temperature in MBE systems and the gallium desorption during high temperature growth can lead to nonuniformities in cladding material composition. These nonuniformities can lead to an asymmetrical waveguiding structure with distorted optical output characteristics. Distortions in the …
-
5/2 state in high election density gallium arsenide/aluminum gallium arsenide quantum well
This Master of Science Thesis is concerned with electronic transport in the higher Landau levels (LL) in a two-dimensional electron system, where novel many-body electronic phases have been observed. Particular attention is paid to the even-denominator fractional quantum Hall states at LL filling …
-
The Characterization of Liquid Phase Epitaxial Indium-Gallium - Arsenide - Phosphide and Indium-Gallium - Arsenide
The growth of InGaAsP and InGaAs by liquid phase epitaxy (LPE) on InP substrates has been investigated to obtain the optimum crystal growth parameters to produce high quality epitaxial layers. The lattice mismatch of these layers with respect to the underlying InP substrate was determined by X-ray …
Page 1 of 14