Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 8 of 8 for “"ferroelectric memories"”.
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Nanostructured ferroelectric materials
… future electronics and information technologies. Ferroelectrics have already been established as a dominant branch in the electronics sector because of their diverse application range such as ferroelectric memories, ferroelectric tunnel junctions, etc. The on-going dimensional downscaling of …
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Electrical characterization of ferroelectric capacitors for non-volatile memory applications
Ferroelectric materials show a spontaneous electrical polarization that can be reversed in sense by an applied external electric field. It should, therefore, be feasible to build a ferroelectric memory device that can store information in digital form. Ascertaining the suitability of a …
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Spin and Carrier Relaxation Dynamics in InAsP Ternary Alloys, the Spin-orbit-split Hole Bands in Ferromagnetic InMnSb and InMnAs, and Reflectrometry Measurements of Valent Doped Barium Titanate
… My final project was on the lead-free ferroelectric BT-BCN. Ferroelectric materials are being investigated for high speed, density, nonvolatile and energy efficient memory devices; however, commercial ferroelectric memories typically contain lead, and use a destructive reading method. …
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Integration of Ferroelectric Materials into High Density Non-Volatile Random Access Memories
The characteristic polarization response of a ferroelectric material to an applied electric field enables a binary state device in the form of a thin film ferroelectric capacitor that can be used to store digital information. In a high density memory the capacitor is placed on the top of a …
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Reliability and processing of ferroelectric thin film capacitors with emphasis on fatigue and etching
Ferroelectric materials are characterized by a reversible spontaneous polarization in the absence of an electric field. The characteristic polarization response of a ferroelectric material to an applied electric field enables a binary state device in the form of a thin film ferroelectric capacitor …
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Advanced circuit design of gigabit density ferroelectric random access memories
The thesis deals with the circuit design of ferroelectric memory chips - called FeRAMs (ferroelectric random access memories). Regular circuits and techniques used in today's FeRAMs are examined for their suitability for use in future FeRAMs. New circuits and techniques are also presented. Some of …
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Formation and characterization of SrBi 2 Ta 2 O 9 (SBT)thin film capacitor module with Platinum-Titanium bottom and Platinum top electrodes
New ferroelectric memories (FeRAMs) provide a enormous business potential. They are nonvolatile, they can be designed like a DRAM with a small cell, and they exhibit fast read and write times. Especially interesting for mobile applications are FeRAMs with SrBi2Ta2O9 (SBT) due to their low voltage …
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In-situ plasmon-enhanced characterization of optically accessible ultra-thin film ferroelectric devices
… for optoelectronic analysis of ultra-thin film ferroelectric (FE) devices, which overcome the drawbacks of contemporary investigation methods such as their destructive nature, lack of precision, or in certain techniques the requirement for a vacuum environment. We show the use of a innovative …