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Showing 1 to 7 of 7 for “"exciton transitions"”.
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Determination of the Band Gap Bowing Parameter of A1xGa1-xN with Contactless Electroreflectance
… technique, has been used to study the A and C exciton transitions in A1xGa1-xN layers for a composition range of 0 ≤ x ≤ 0.48 at room temperature. Taking the entire composition range (0 ≤ x ≤ 1) into account by incorporating a previously reported band gap energy for AlN, the dependence of the …
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OPTICAL CHARACTERIZATION OF WIDE ENERGY AGP GROUP III-NITRIDE SEMICONDUCTORS
… grown on (1000)-plane sapphire substrates. Free exciton transitions, bound exciton transitions and longitudinal optical (LO) phonon-assisted exciton transitions were observed in undoped GaN samples. By applying Permogorov's theory, we gave a reasonable explanation to the temperature dependence of …
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The U center in potassium bromide crystals
… bands, including the a band which is due to exciton transitions near a negative ion vacancy. One component of the U' band is bleached readily in either of two ways: either by warming the crystal to lo6°K or by irradiating with monochromatic light in the Ul band. This component of the ut band …
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Optical and Spin Properties of Defect-Bound Excitons in Semiconductors
… of spontaneous emission from multi-carrier bound excitons. We apply this theory to the neutral-acceptor bound exciton, finding three distinct radiative lifetimes. Next, we utilize our knowledge of bound-exciton transitions to measure the spin lifetime of donor-bound electrons. These measurements …
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Low-temperature magnetophotoluminescence characterization of high-purity gallium arsenide and indium phosphide
… of ""two-electron"" satellites of donor bound exciton transitions in a high magnetic field and at liquid helium temperature. This technique is successfully used to identify donors in n-type GaAs as well as in p-type GaAs in which donors cannot be identified by any other technique. The technique …
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Optoelectronic properties and energy transport processes in cylindrical J-aggregates
… to study the supramolecular origins of the exciton transitions and fundamental nature of exciton energy transport in C8S3 artificial light harvesting systems. Two J-aggregate morphologies are investigated: well-separated, double-walled nanotubes and bundles of agglomerated nanotubes. Linear …
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Low temperature magneto-photoluminescence characterization of high purity gallium arsenide and indium phosphide
… of ""two-electron"" satellites of donor bound exciton transitions 1n a high magnetic field and at liquid helium temperature. This technique 1s successfully used to identify donors 1n n-type GaAs as well as 1n p-type GaAs in which donors cannot be identified by any other technique. The technique …