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Showing 1 to 3 of 3 for “"exciton oscillator strengths"”.

  1. Quasi-Two-Dimensional Phenomena at Aluminum-Gallium - Arsenide - Gallium-Arsenide Heterointerfaces: Multiple Quantum Wells and Modulation-Doped Structures (Superlattice, Modfet, Semiconductors)

    … described: optical absorption coefficients and exciton oscillator strengths in AlGaAs-GaAs multiple quantum wells are greatly enhanced as well widths become narrower: this effect is in excellent agreement with recent calculation. Additionally acceptor energies in quantum wells are studied both …

    uiuc Repository record for Quasi-Two-Dimensional Phenomena at Aluminum-Gallium - Arsenide - Gallium-Arsenide Heterointerfaces: Multiple Quantum Wells and Modulation-Doped Structures (Superlattice, Modfet, Semiconductors) (opens in a new tab)

  2. Electric field effects on optical absorption by excitons in semiconductors

    The effect of an electric field on exciton oscillator strengths is calculated for both bound and continuum states. The calculation is performed for Wannier excitons using the effective~mass approximation at both the Mo and M3 type edges. In comparison with single-particle theory, the inclusion of …

    uiuc Repository record for Electric field effects on optical absorption by excitons in semiconductors (opens in a new tab)

  3. Quasi-two-dimensional phenomena at AlGaAs-GaAs heterointerfaces, multiple quantum wells and modulation-doped structures

    … described: optical absorption coefficients and exciton oscillator strengths in AIGaAs-GaAs multiple quantum wells are greatly enhanced as well widths become narrower: this effect is in excellent agreement with recent calculation. Additionally acceptor energies in quantum wells are studied both …

    uiuc Repository record for Quasi-two-dimensional phenomena at AlGaAs-GaAs heterointerfaces, multiple quantum wells and modulation-doped structures (opens in a new tab)