Global ETD Search
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Showing 1 to 2 of 2 for “"epitaxial interface"”.
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Silicon molecular beam epitaxy
… was observed to occur at the substrate/epitaxial interface where the presence of an oxide layer prior to growth was apparently critical for its accumulation. Two new techniques in co-evaporatIve doping in Si-MBE are reported. The use of co-evaporated boron doping was Investigated …
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Non-Silicon MOSFETs and Circuits with Atomic Layer Deposited Higher-k Dielectrics
… with 1μm gate length. La2-xYxO3/GaAs(111)A interfaces are systematically investigated in both material and electrical aspects. The work has expanded the near 50 years GaAs MOSFETs research to an unprecedented level. Following the GaAs work, Ge n- and p-MOSFETs with epitaxial interfaces are …