Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 125 for “"epitaxial growth"”.
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Lattice gas models and simulations of epitaxial growth
… develop models for the numerical simulation of epitaxial crystal growth, as realized, e.g., in molecular beam epitaxy (MBE). The basic idea is to use a discrete lattice gas representation of the crystal structure, and to apply kinetic Monte Carlo (KMC) simulations for the description of the …
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Epitaxial growth and plasmonic coupling in topological insulator heterostructures
… devices that function in the THz. ☐ The epitaxial growth of chalcogenide TI family Bi2Se3, Bi2Te3, and Sb2Te3 is dominated by van der Waals epitaxy. To produce high quality thin film for optical application, the growth of TI must be optimized to fit the needs on various substrates. The …
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Heavy rare earth superlattices: Epitaxial growth, structure, and magnetic properties
… in this thesis research. Studies of the growth behavior of hcp rare earth metals on bcc transition metal (110) and (211) surfaces, using electron and x-ray scattering probes, are presented. The structural and magnetic properties of Dy-Y and Er-Y superlattices oriented on the (0002) axis …
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Selective epitaxial growth techniques to integrate high-quality germanium on silicon
… multijunction solar cells. However, growing epitaxial Ge on Si poses many engineering challenges, ranging from lattice mismatch, to thermal expansion coefficient mismatch, to non-planar morphological evolution. The lattice mismatch between Ge and Si often leads to a high density of threading …
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High-purity epitaxial growth and characterization of III-V compound semiconductors
The growth and characterization of epitaxial indium gallium arsenide phosphide compound semiconductor films are described. Methods have been developed to improve the purity of both InP and GaAs and to better assess the crystalline homogeneity of the InGaAsP alloy system.
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Epitaxial growth and characterization of hexagonal boron nitride for deep UV applications
… metal organic chemical vapor deposition (MOCVD). Growth of wafer scale hBN and the ability of electrical conductivity control in this exciting semiconductor are demonstrated. The structural and optical properties of hBN epilayers were characterized by X-ray diffraction and polarization resolved PL …
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Molecular beam epitaxial growth and characterization of indium antimonide on gallium arsenide
Described in this thesis are the molecular beam epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by …
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Low pressure epitaxial growth, fabrication and characterizion of Ge-on-Si photodiodes
… germanium onto silicon substrates (Ge-on-Si). A growth space is identified to deposit blanket and selective epitaxial 1 to 3 rim-thick Ge-on-Si films via a two-step process. These deposited Ge-on-Si films have a low root-mean-square surface roughness (below 2 nm) and a moderate threading …
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Epitaxial growth of semiconductors and chiral metal surfaces using spin coating and electrodeposition
"The current primary methods for epitaxial growth are energy intensive, requiring high temperature or high vacuum to obtain quality thin films. This dissertation explores the solution process methods of electrodeposition and spin coating for growth of epitaxial thin films. First, a method is …
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In Situ Enrichment and Epitaxial Growth of 28Si Films via Ion Beam Deposition
… this 28Si enrichment, I also pursue the epitaxial deposition of 28Si thin films. Characterizations of the film morphology and crystallinity are presented showing that smooth, epitaxial 28Si films are achieved using deposition temperatures between 349 C and 460 C. Crystalline defects …
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Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication
… and InN, InN has only recently become attainable epitaxially with qualities good enough to characterize and use in devices. Much, however, is yet to be answered regarding the processes of crystal formation of InN. This study investigates the processes by which InN nanostructures form in MBE …
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Feedback control of organometallic vapor-phase epitaxial growth of aluminum gallium arsenide devices
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
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Molecular beam epitaxial growth and charcterization of mismatched InGaAs and InAlAs layers on InP
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1993.
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Liquid phase epitaxial growth and heterointerface characteristics of long-wavelength indium gallium arsenide phosphide heterostructures
… epitaxy on InP substrate can, under certain growth conditions, exhibit considerably narrower diffraction profile half-widths than previously reported. The double crystal x-ray diffraction half-width is a relatively new assay of crystalline alloy compositional homogeneity, and the 13 arc sec …
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LARGE-AREA, WAFER-SCALE EPITAXIAL GROWTH OF GERMANIUM ON SILICON AND INTEGRATION OF HIGH-PERFORMANCE TRANSISTORS
Building on a unique two-step, simple MBE growth technique, we have investigated possible dislocation locking mechanisms by dopant impurities, coupled with artificially introduced oxygen. In the case of n-type Ge grown on Si, our materials characterization indicates that the dislocation density …
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EPITAXIAL GROWTH AND REAL-TIME ELECTRON DIFFRACTION ANALYSIS OF ADVANCED III-V SEMICONDUCTOR-BASED QUANTUM DOTS
The impact of growth kinetics on structural properties significantly affects optical and electronic performances of self-assembled Stranski-Krastanov (SK) quantum dots. Here and within the framework of the synthesis of archetype InAs/GaAs quantum dot system we have undertaken a systematic study on …
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Liquid-Phase Epitaxial Growth and Properties of Indium-Gallium-Phosphide and Indium-Gallium Phosphide-Arsenide Injection Lasers
Made available in DSpace on 2015-05-13T15:21:57Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7606798.PDF: 3791228 bytes, checksum: f8c19a609446fb74d6eea0f1f0990f94 (MD5) Previous issue date: 1975
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