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Showing 1 to 6 of 6 for “"electroreflectance"”.
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Electroreflectance of silicon
Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-12T21:49:32Z No. of bitstreams: 1 1973_grover.pdf: 2607668 bytes, checksum: cd6ed81744c48c6e0917a30086d90b44 (MD5)
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Electroreflectance of germanium
… region .7 eV to 5 eV was investigated using the electroreflectance (ER) technique. Several transitions were detected in this energy range and in almost all cases, the associated critical points were identified as to their type and origin in k-space. At the direct edge (r~ r7 transitions at .79 …
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Electroreflectance of gallium arsenide
"The electroreflectance spectrum of n-type gallium arsenide in the 1.2 - 5.3 eV photon energy range has been measured. The 6e l and 6e2 l1neshapes of six different critical points were analyzed in detail by fitting the one-electron Frapz-Keldysh-Aspnes theory to each separate critical point …
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Determination of the Band Gap Bowing Parameter of A1xGa1-xN with Contactless Electroreflectance
Contactless electroreflectance (CER), a modulation spectroscopy (MS) technique, has been used to study the A and C exciton transitions in A1xGa1-xN layers for a composition range of 0 ≤ x ≤ 0.48 at room temperature. Taking the entire composition range (0 ≤ x ≤ 1) into account by incorporating a …
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Development and application electrochemical and spectrophotometric methods based upon AC potential modulation for characterization of hybrid bilayer membranes and electroactive self -assembled monolayers supported on gold electrodes
… reflectance coefficient, a ratio of ac electroreflectance to both DC electroreflectance and ac interfacial potential, is shown to be the most useful quantity to represent ac electroreflectance data. The same kinetic information on the surface faradaic reactions is available from …
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OPTICAL CHARACTERIZATION OF WIDE ENERGY AGP GROUP III-NITRIDE SEMICONDUCTORS
… findings. Photoreflectance (PR) and contactless electroreflectance (CER) were employed to study the undoped GaN, n-type GaN, Au-Schottky contacts on GaN, and piezoelectric effects in AIGaN/InGaN/GaN heterostructures. With the assistance of the PV spectra, we found that both the free exciton …