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Showing 1 to 2 of 2 for “"electron-phonon relaxation time"”.
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Thermodynamics of disordered carbon(1-x)copper(x) and silicon(1-x)gold(x) near the metal-insulator transition
Measurements of the electron-phonon relaxation time are carried out, using both a direct and indirect method, in three dimensional films of C$\sb{1-x}$Cu$\sb x$ and Si$\sb{1-x}$Au$\sb x$ in the temperature range 0.3K-4K. The electron-phonon resistance and thermal boundary resistance are also …
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Thermodynamics of disordered C1-xCux and Si1-xAux near the metal-insulator transition
Measurements of the electron-phonon relaxation time are carried out, using both a direct and indirect method, in three dimensional films of Cl-xCUx and Si1-xAUx in the temperature range 0.3K-4K. The electron-phonon resistance and thermal boundary resistance are also measured. The directly measured …