Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 212 for “"electron mobility"”.
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Array-based planar nanowire high electron mobility transistor
… this thesis research, a bottom-up planar-NW high electron mobility transistor (HEMT) technology was developed to overcome the above challenges. Uniform and scalable electrical properties were demonstrated by prototype planar NW HEMTs with multiple 250 nm diameter planar NWs in the channels. …
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Degradation mechanisms of GaN high electron mobility transistors
… of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. However, physical understanding of the fundamental reliability mechanisms of GaN …
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Two-Dimensional Simulation of the High Electron Mobility Transistor
The High Electron Mobility Transistor (HEMT), a recently developed electronic device which takes advantage of the excellent conduction properties of modulation-doped GaAa/AlGaAs semiconductors, has been shown to perform well for both high-speed digital and analog applications. Switching speeds on …
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Circuit Simulation Models for the High Electron Mobility Transistor
The high electron mobility transistor (HEMT) is one of the fastest switching devices available today. In order to best utilize its capabilities one must be able to simulate its behavior in electronic circuits. This requires an efficient and accurate mathematical model for both dc and ac analysis …
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Electric field engineering in GaN high electron mobility transistors
In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase the frequency to mm-wave frequencies. The goal of this thesis has been to …
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Fabrication and characterization of AlGaN/GaN high electron mobility transistors
The task of this work was to fabricate and characterize AlGaN/GaN HEMTs on sapphire and silicon substrates. For this reason the HEMT fabrication technology had to be developed and optimized on AlGaN/GaN heterostructures grown on sapphire and silicon substrates. The optimization of AlGaN/GaN …
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Deeply-scaled GaN high electron mobility transistors for RF applications
… of large critical breakdown field and high electron velocity, GaN-based high electron mobility transistors (HEMTs) have great potential for next generation high power RF amplifiers. The performance of GaN devices has increased continuously in the last two decades. However, in spite of the …
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Reliability of GaN high electron mobility transistors on silicon substrates
GaN High Electron Mobility Transistors are promising devices for high power and high frequency applications such as cellular base stations, radar and wireless network systems, due to the high bandgap and high breakdown field of GaN. However, their reliability is the main hindrance to the deployment …
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Physics of electrical degradation in GaN high electron mobility transistors
The deployment of GaN high electron mobility transistors (HEMT) in RF power applications is currently bottlenecked by their limited reliability. Obtaining the required reliability is a difficult issue due to the high voltage of operation. In order to improve reliability, it is essential to develop …
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Electrical degradation of InAlAs/InGaAs metamorphic high electron mobility transistors
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
AlGaN/GaN High Electron Mobility Transistors (HEMTs) have enjoyed tremendous market growth in RF power amplifiers over the past decades. In the quest for enhancing the operating frequency of GaN HEMTs, there has been a great effort to scale down the gate length. Maintaining acceptable short-channel …
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A two-dimensional numerical model of the high electron mobility transistor
A two-dimensional numerical model of the high electron mobility transistor (HEMT) with consideration of quantization in the channel is presented. In this model, the spatial spread of the electron concentration in the quantum well normal to the heterojunction is taken into consideration by solving …
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Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors
… of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Chapter 2 reports the development of in situ vacuum anneal and SiH4 or SiH4+NH3 passivation to realize high quality metal gate/high-k dielectric stacks on GaN surface using a multi-chamber metal-organic …
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Limiting physics of mm-wave InP power high electron mobility transistors
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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Dielectric reliability in GaN metal-insulator-semiconductor high electron mobility transistors
GaN Metal Insulator Semiconductor High Electron Mobility Transistors (GaN MIS-HEMTs) show excellent promise as high voltage power transistors that can operate efficiently at high temperatures and frequencies. However, current GaN technology faces several obstacles, one of which is Time-Dependent …
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The development of sub-25 nm III-V High Electron Mobility Transistors
High Electron Mobility Transistors (HEMTs) are crucially important devices in microwave circuit applications. As the technology has matured, new applications have arisen, particularly at millimetre-wave and sub-millimetre wave frequencies. There now exists great demand for low-visibility, security …
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Planar nanowire high electron mobility transistor and down-scaling of planar nanowire
Monolithically grown planar nanowire (NW) high electron mobility transistors (NW-HEMTs) have been demonstrated with self-aligned <110> planar GaAs NW channels capped by a thin film AlGaAs barrier. The planar NW-HEMTs exhibit uniform and scalable DC characteristics; and resolve the electrical …
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Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors
… at the Al₂O₃-GaN interface and the increase in electron density in the device resulting from them. In both these problems, a combination of device electrical measurements and material characterization techniques was used to establish direct correlations between device behavior and material …
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Advanced Processing Techniques for Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors
Using all the processing advancements demonstrated through the research undertaken in this dissertation highlights the potential of GaN-based transistors for next generation millimeter-wave applications, and possibly digital applications.
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