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Showing 1 to 12 of 12 for “"electron channel"”.
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W cross section measurement in the electron channel in pp collisions at [the square root of sigma]= 7 TeV
… cross section. measurements are performed in the electron decay channel. The experiment recorded tests of the Standard of the W-production In this thesis, both results obtained are: [sigma](W -> ev) = 10.48 ± 0.03(stat.) 0.15(syst.) ± 0.09(th.) ± 0.42(lumi.)nb [sigma](W+ -> e+v, U(W+ - ez) = 1.430 …
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Real-Space Transfer Transistors Grown by Metalorganic Chemical Vapor Deposition
… charge-injection transistor, the standard GaAs electron channel is replaced with a strained-layer ln$\sb{x}$Ga$\sb{1-x}$As electron channel. With increasing indium composition in the channel, the drain current peak-to-valley ratio, at room temperature, is increased from 1.7 in GaAs electron …
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Search for the standard model Higgs Boson in the Z gamma channel
… and a Z boson, with the Z boson decaying into an electron-positron pair (electron channel) or muon-antimuon pair (muon channel), allows for accurate reconstructions of the Higgs boson mass and measurement of the Higgs to Z-[gamma] coupling. We explore selection criteria for the photon and the two …
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A MEASUREMENT OF Rμ = σ(W → μv)/σ(Z^0→ μ^+ μ^-) IN PP ̅ COLLISIONS AT √S = 1.8 TEV
A measurement in the muon channel of the ratio of W and Z production cross sections times branching ratios yields Rμ = σ(W → μv)/σ(Z^0→ μ^+ μ^-) = 9.8 ± 1.1(stat) ± 0.4(syst), where the statistics of the Z sample is the dominant uncertainty. The individual cross sections times branching ratios are …
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Characterizing the background in tt events with a J/ψ → µ −µ + in proton-proton collisions at √ s = 13 TeV using the ATLAS detector
… was determined to be overestimated in the muon channel but more accurately estimated in the electron channel in the signal region. This background lepton contribution was determined using the common methodology by the ATLAS experiment. The background contribution from J/ψ mesons was determined …
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Edge radial electric field studies via charge exchange recombination spectroscopy on the Alcator C-Mod Tokamak
… to agree well with the Thomson Scattering electron temperature profiles in bothl shape and magnitude over a wide range of collisionalities. In H-mode plasmas both the boron temperature and density profiles form clear pedestals, similar to what is observed in the electron channel. The edge …
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Studies at the CMS experiment on silicon microstrip module defects and on photon identification in semileptonic tt-events
… the identification of semileptonic ttbar-events (electron and muon channel) containing photons that are radiated off top-quarks. A signature based Monte Carlo analysis reveals that the separation of the ttbar-events from the non-ttbar background (W + Jets, Z + Jets, di-boson, Photon + Jets, and …
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A measurement of W boson-photon and Z boson-photon cross sections in the muon channel in 1.8 TeV proton-antiproton collisions
… for W + $\gamma$ and Z + $\gamma$ in the muon channel in $\sqrt{s}$ = 1.8 TeV p-p collisions, from 3.54 $\pm$ 0.24 $pb\sp{-1}$ of muon W and Z data from the CDF 1988-89 Tevatron collider run. For photons in the central region ($\vert\eta\vert $ 5.0 GeV and lepton-photon angular separation …
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Epitaxial aluminium gates in ultra-shallow GaAs/AlxGa1-xAs heterostructures for low disorder nanoelectronics
Researchers in the field of nanoelectronics partake in the unending pursuit to reduce device size in order to minimise energy consumption and maximise operation temperature. Device reduction entails decreasing the depth of the conduction channel below the wafer surface, but increased scattering …
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New physics searches in the ZZ sector with the ATLAS experiment
… themselves as an excess of events in ZZ diboson channels, and, if observed, would be a direct probe of new physics beyond the Standard Model. A set of criteria are outlined to select events recorded by ATLAS in two such channels, ZZ to llll(l = e, mu) and ZZ to llnunu. With 1 fb-1 of integrated …
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A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
… were not dependent on the doses of Hf. Also, electron channel mobility was not degraded by Hf contamination. The amount of Hf diffused into the Si substrate during the high- k dielectric imposed negligible effects on silicon based MOS device characteristics in terms of C-V, J-V characteristics …
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Observation of upsilon suppression, search for long-lived particles, and observation of B0s → micro + micro-- at the LHC with the CMS experiment
… of 20.5 (19.6) / fb<sup>-1</sup> in the muon (electron) channel. No significant excess is observed beyond the standard model expectations. Upper limits are set at 95% confidence level on the product of the cross section and branching fraction of such a signal, as a function of the lifetime of …