Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 15 of 15 for “"electron beam induced current"”.
-
The Trapped Charge Interfacial Modulation of the Electron Beam Induced Current in Metal Oxide Semiconductor Capacitors
… and were placed in the focal plane of a scanning electron microscope (SEM) to selectively populate and generate the oxide traps. As the electron beam scans from a region of the MOSC in the WRITE state to a region in the ERASE state, the electron beam induced current (EBIC) exhibits an abrupt …
-
Diffusion characterization of antimony-based type-II superlattices using electron beam induced current and time-resolved photoluminescence
… have superior performance, when compared to the current state-of-the-art infrared detectors, such performance has yet to be demonstrated. A primary limiting factor in T2SL device performance is the thermal generation of carriers via a variety of defects and impurities in the T2SL material. …
-
Elektrische Mikrocharakterisierung von elektrochemisch hergestellten CIS-Solarzellen mittels EBIC
… dieser Arbeit geht es um die Interpretation von Electron-Beam-Induced-Current(EBIC)-Messungen an CIS-Solarzellen. Die EBIC-Messungen werden sowohl im Proben-Querschnitt (JEBIC) als auch planar (PEBIC) durchgeführt. Bei der JEBIC-Auswertung wird das Signal mit der lateralen Dosis des e-Strahls …
-
Post-crystallisation treatment and characterisation of polycrystalline silicon thin-film solar cells on glass
… lies in the range of 1.6 to 2.2. Cross-sectional electron beam-induced current measurements reveal that the p-n junction of our textured samples is disrupted and non-conformal due to the texture features.
-
Antimony-based type-II superlattice infrared photodetectors on indium-arsenide substrates
… next genera- tion of detectors in place of the current systems, such as mercury cadmium telluride. While type-II superlattices over a number of advantages in design and material quality, theoretical predictions of their high performance have yet to be realized. This work concentrates on novel …
-
Advanced Electron-Beam Techniques for Solar Cell Characterization
… a detailed comparative study of advanced electron-beam based techniques for solar cell characterization. Firstly, the advantage of the subsurface imaging of scanning electron acoustic microscopy (SEAM) was utilized to characterize the structural properties of saw-damage-induced defects and …
-
Characterization of, and novel architectures for, strained-layer superlattice infrared photodetectors
The current generation of infrared photodetectors, used in imaging and sensing applications, are predominantly made of an expensive II-VI material, HgCdTe (mercury cadmium telluride, MCT). A viable alternative class of materials, the III-V type-II superlattices (T2SLs), have been actively studied …
-
Strain-balanced silicon-germanium materials for near IR photodetection in silicon-based optical interconnects
… the strain-balanced superlattices by molecular beam epitaxy (MBE) and ultra high vacuum chemical vapor deposition (UHV-CVD) is presented and the role of adsorbed hydrogen during UHV-CVD growth is addressed. Hydrogen adsorption 0,1 the growth surface proved a useful technique to minimize coherent …
-
Photovoltaic modeling and grain boundary recombination in poly-silicon
… Based on this model, the short circuit current, open circuit voltage and energy conversion efficiency of the cells as a function of doping concentration, junction depth, minority carrier surface recombination velocity and diffusion length are discussed. This model simplifies the analysis …
-
Carrier transport properties measurements in wide bandgap materials
… these transport properties. The two were optical beam induced current (OBIC) and electron beam induced current (EBIC) time of flight transient measurements. These techniques consist of measuring the current response to the drift and diffusion of generated electron-hole pair carriers created by a …
-
Defect characterization of antimonide-based type-II superlattices for infrared detection
… gap alignment of these heterostructures allows electrons and holes to be confined in separate but adjacent, nanometer scale thickness, material layers. When arranged in a highly periodic structure comprised of thin layers of alternating materials, known as a superlattice (SL), the carriers form …
-
Theory and Experiment of Antimony-Based Type-Ii Superlattice Infrared Photodetectors
There is currently considerable interest in InAs/InGaSb type-II superlattices because of their broken-gap type-II band alignment, which forms spatially indirect band gaps in the range of 3--30 mum. Combining the advantages of III-V epitaxial growth techniques and high sensitivity to normal incident …
-
The uncommon nature of point defects in organic-inorganic Perovskite solar cells
… band. Defects with deep states, which act as electronic traps, are expected to be much less common due to their high formation energies. In this thesis, we demonstrate that, despite the preference for shallow defects, point defects play an integral role in materials properties and PSC device …
-
Nanostructured photovoltaics : improving device efficiency and measuring carrier transport
… This approach results in PV devices with photocurrent density greater than 30 mA/cm2, which represents a 15% improvement compared to planar devices and enables solar cells with power conversion efficiency up to 9.6%. This photocurrent density is the highest achieved for QDs with a 1.3 eV band …
-
Electron Injection-induced Effects In Iii-nitrides: Physics And Applications
This research investigated the effect of electron injection in III-Nitrides. The combination of electron beam induced current and cathodoluminescence measurements was used to understand the impact of electron injection on the minority carrier transport and optical properties. In addition, the …