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Showing 1 to 20 of 22 for “"electrical stress"”.
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Degradation Studies of Ultrathin Silicon Oxide Under Electrical Stress Using a Scanning Tunneling Microscope
Submitted by Jesse Garrison (jagarris@illinois.edu) on 2012-01-17T18:25:40Z No. of bitstreams: 1 1999_hetrick.pdf: 3179100 bytes, checksum: 1456c9f34957d5afe213413ca490bce8 (MD5)
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Study the electrical stress withstand properties of heated refined bleached and deodorized palm oil dielectrics
… it to avoid a breakdown when the electric stressed. The average value of the BDV increases slightly as the increase of the temperature. The potential of RBDPO, as an electrical insulating liquid, to replace the petroleum-based mineral oil also can be concluded from the viscosity and acidity …
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Fully Solution Processed PEDOT:PSS and Silver Nanowire Semi-Transparent Electrodes for Thin Film Solar Cells
… suffer from a short lifetime when subject to electrical stress. The goals of this work were to fabricate a PEDOT:PSS electrodes without using strong acids, a silver nanowire electrode with a lifetime that can exceed 6000 hours of constant electrical stress, and use these two electrodes to …
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An investigation of defect formation and growth in epoxy resin using light scattering methods
… role these defects play in the mechanical and electrical failure of the polymer. Mie Theory was used in the analysis of the data throughout this thesis. Ultra clean fully degassed samples were prepared to ensure any scatterers observed were Inherent to the sample. It was discovered that …
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EM field effects on the surface of polluted HV insulators
… Chapter 6 describes an experimental study of electrical breakdown at the edges of sessile water droplets on a PE surface subject to ac electrical stress up to of 2.0MV/m at 50 Hz. The study involves observing the motion of water droplets using a high-speed video camera operating at 3000 frames …
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Partial discharge ageing of polymer insulation under combined AC and DC stress at elevated temperatures
… a bench-mark. It was decided to use the thermo-electrical stress to age the samples. For thermal stress, 90°C was chosen as the aging temperature for HDPE, while 90°C and 110°C were chosen for PP.;For the electrical stress, AC & DC combined voltage was used to age the samples. DC voltage was 6 …
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Insulation Design and Analysis for Medium-Voltage SiC-based Power Electronics Building Blocks
… to minimize insulation degradation caused by electrical stress. In addition to electrical stress, the current carrying capacity (CCC) of these printed circuit boards (PCBs) was assessed concerning steady-state thermal performance and short-circuit (SC) robustness. Multiple configurations were …
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Degradation mechanisms of GaN high electron mobility transistors
… BAE systems. In our study, GaN HEMTs have been electrically stressed at various bias conditions while they are being characterized by a benign characterization suite. We have confirmed that electrical stress on devices results in an increase in drain resistance RD and a decrease in maximum drain …
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Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress
… when exposed to elevated temperatures and electrical stress over long durations. This study aims to investigate the degradation behavior of commercial EPC90122 GaN HEMT devices under controlled high-temperature operating conditions. Accelerated degradation testing is conducted by heating …
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Reliability of GaN high electron mobility transistors on silicon substrates
… SiC and sapphire. We have performed systematic electrical stress experiments to understand the physics of degradation in these devices. Relevant device parameters are recorded continuously during these stress tests by a benign characterization suite. We conclude from these experiments that high …
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Physics of electrical degradation in GaN high electron mobility transistors
… investigate the physical mechanisms behind the electrical degradation of GaN HEMTs by performing systematic stress experiments on devices provided by our industrial collaborators. These devices are electrically stressed under various bias conditions while regularly characterized by a benign …
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Electrical characterization of EEPROM test structures
Electrically Erasable Programmable Read Only Memory (EEPROM) test structures have been studied using Fowler-Nordheim (FN) tunneling and low-frequency noise measurements, both before and after electrical stress. Non-linear FN curves have been observed, which can yield insights into the failure …
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Low Power Cmos Circuit Design And Reliability Analysis For Wireless Me
… is developed that applies accelerated electrical stress on MOS devices to extract BSIM3 models and RF parameters through measurements to perform comprehensive study, analysis and modeling of several analog and RF circuits under hot carrier and breakdown degradation.
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Measuring Level of Degradation in Power Semiconductor Devices using Emerging Techniques
High thermal and electrical stress, over a period of time tends to deteriorate the health of power electronic switches. Being a key element in any high-power converter systems, power switches such as insulated-gate bipolar junction transistors (IGBTs) and metal-oxide semiconductor field-effect …
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Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs
… a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high power and high frequency applications. However, the poor long term reliability of these devices is an important bottleneck for their wide …
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CHARACTERIZATION OF SNEAK PATH CURRENT EFFECT IN A PEDOT: PSS-BASED ReRAM CROSSBAR ARRAY
… cell in a crossbar array responds to prolonged electrical stress by applying low-voltage cycling corresponding to a sneak-path conduction. The device has a PEDOT:PSS as a switching layer sandwiched between Cu bottom electrode and Ag top electrode. The width of the electrodes is 10 µm and the …
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Study of Si/SiO2 interface passivation and SiO2 reliability on deuterium implanted silicon
… capacitors was investigated by extensive electrical characterization. Deuterium and hydrogen implanted capacitors showed identical interface passivation effect. Secondary Ion Mass Spectroscopy (SIMS) study supported the electrically measured data and showed the presence of deuterium both …
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Dielectric reliability in GaN metal-insulator-semiconductor high electron mobility transistors
… (TDDB) of the gate dielectric. Under prolonged electrical stress, the gate dielectric suffers a catastrophic breakdown that renders the transistor useless. Understanding the physics behind gate dielectric breakdown and accurately estimating the average time to failure of the dielectric are of …
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Reliability Characterisation of III-Nitrides Based Devices for Technology Development
… gate. Through electro-thermal simulations, the electrical stress on Ohmic contacts was shown to reduce the strain; leading to the inverse/converse piezoelectric effect. A new parametric technique was developed to decouple the mechanisms constituting device degradation in AlGaN/GaN HEMTs under …
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Preparation and investigation of polymer-foam films and polymer-layer systems for ferroelectrets
… moments in response to external mechanical or electrical stress. Over the past two decades, polypropylene (PP) foams have been investigated with the aim of ferroelectret applications, and some products are already on the market. PP-foam ferroelectrets may exhibit piezoelectric d33 coefficients …
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