Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 14 of 14 for “"electrical degradation"”.
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Electrical degradation mechanisms of RF power GaAs PHEMTs
… levels and under high voltage biasing, their electrical reliability is of serious concern. Previous studies have identified several distinct degradation phenomena in these devices, but a complete picture has yet to be formed. In this study, we have carried out a comprehensive study of the …
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Physics of electrical degradation in GaN high electron mobility transistors
… physical understanding of the fundamental degradation mechanisms. In this thesis, we investigate the physical mechanisms behind the electrical degradation of GaN HEMTs by performing systematic stress experiments on devices provided by our industrial collaborators. These devices are …
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Electrical degradation of InAlAs/InGaAs metamorphic high electron mobility transistors
… Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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Investigation on no-load mechanical endurance and electrical degradation of a circuit breaker model under short circuit current interruption
… parts and the experimental investigation on electrical erosion inside the interrupter were performed in this work.The experimental investigation on the mechanical endurance of operating mechanism up to 6,000 no-load switching was performed with 110kV puffer type circuit breakers due to its …
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Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
… wide deployment can be realized. In this thesis, degradation mechanisms of GaN HEMTs under high-power and high-temperature stress have been studied. A novel technique to extract activation energy of degradation rate from measurements on a single device has been proposed. High-power and …
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Degradation mechanisms of GaN high electron mobility transistors
… BAE systems. In our study, GaN HEMTs have been electrically stressed at various bias conditions while they are being characterized by a benign characterization suite. We have confirmed that electrical stress on devices results in an increase in drain resistance RD and a decrease in maximum drain …
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Mechanical performance of optical fibre cable: A theoretical and practical analysis to establish advanced design rules for optical fibre cables.
… associated with aerial cables, namely electrical degradation and shotgun damage. In addition to these mechanical life limiting properties, the consequences of long term cable water soak on optical fibre performance has been modelled using experimental and simulation techniques. The …
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Effect of varying gate-drain distance on the RF power performance of pseudomorphic high electron mobility transistors
… voltage of short LRD devices is limited by electrical degradation. Pulsed I-V measurements have revealed that long LRD devices increasingly suffer from surface state activity that limit the maximum drain current under RF operation. A delay time analysis has shown an increasing extension of …
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Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs
… a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high power and high frequency applications. However, the poor long term reliability of these devices is an important bottleneck for their wide …
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Systematics of bond length and radii variations in fluoride and silicate molecules and crystals
Fatigue and electrical degradation including low voltage breakdown of ferroelectric lead zirconate titanate Pb(Zr<sub>x</sub>Ti<sub>1 - x</sub>)O₃ (i.e. PZT) thin films are the major limitations for commercial memory applications of these films. It is noted that the presence of oxygen vacancies and …
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Electrical properties of doped and undoped PZT thin films prepared by a sol-gel method
Fatigue and electrical degradation including low voltage breakdown of ferroelectric lead zirconate titanate Pb(Zr<sub>x</sub>Ti₁)O₃ (i.e. PZT) thin films are the major limitations for commercial memory applications of these films. It is noted that the presence of oxygen vacancies and their …
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The degradation of all-dielectric self supporting cables installed in high potential electro-magnetic fields.: A theoretical and practical evaluation of optical fibre cables strung independently on overhead power transmission lines
… power transmission lines is limited by sheath degradation caused by induced electrical activity on the cable's surface. The work presented in this thesis describes research completed to quantify this degradation. This has resulted in a novel analysis method being developed and used to associate …
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DC, RF, and Thermal Characterization of High Electric Field Induced Degradation Mechanisms in GaN-on-Si High Electron Mobility Transistors
… primary means by which the GaN-on-Si devices are electrically strained. The critical voltage is defined as the specific voltage bias by which a sudden change in device performance is experienced due to a deformation of the target GaN HEMT’s epitaxial structure. Literature on the topic details the …
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Development of procedures for performance measurements and lifetime testing of thin film photovoltaic devices
… be able to characterize these technologies for electrical performance and to find out potential failure mechanisms in accelerated lifetime testing. Thin film modules may increase their share of the market in the future. A-Si modules have been manufactured already for several years and CdTe and …