Global ETD Search
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Showing 1 to 2 of 2 for “"edge termination (ET)"”.
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High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
… devices. First, conventional GaN processing methodologies, such as, ion-implantation and inductively-coupled plasma reactive-ion etching (ICP-RIE) etching, introduce lattice damage and defects, causing large leakage current components. Second, inefficient edge termination (ET) designs are …
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Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
… Ga2O3 Schottky and P-N diodes with a novel edge termination (ET), the multi-layer Nickel Oxide (NiO) junction termination extension (JTE), are fabricated on Ga2O3 substrates. This multi-JTE NiO structure decreases the peak electric field (Epeak) at the triple point of device edge when the …