Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 48 for “"dv/dt"”.
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Series-Connection of Silicon Carbide MOSFET Modules using Active Gate-Drivers with dv/dt Control
… gate control technique (specifically, turn-off dv/dt control) is described in this thesis. Experimental results of the voltage balancing behavior across eight 1.7 kV rated SiC MOSFET devices in series (6 kV total dc bus voltage) with the selected active dv/dt control scheme are demonstrated. …
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Evaluation of Voltage-Controlled Active Gate-Drivers for SiC MOSFET Power Semiconductors
… [Silicon-Carbide (SiC)] devices come a host of advantages, including higher switching frequency, improved thermal performance, and higher voltage rating. This higher switching frequency can reduce the size of the con- verter system, but is typically associated with higher dv/dt voltage slew rates …
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High Power Inverter EMI Characterization and Improvement by Auxiliary Resonant Snubber Inverter
… have been commonly identified as high switching dv/dt and di/dt rates interacting with inverter parasitic components. The reduction of parasitic components relies on highly integrated circuit layout and packaging. This is the way to deal with noise path. On the other hand, switching dv/dt and …
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EMI Noise Reduction Techniques for High Frequency Power Converters
… forces for power supply systems. However, high dv/dt and di/dt in switch mode power supplies will cause severe EMI noise issue. In a typical front-end converter, the EMI filter usually occupies 1/3 to 1/4 volume of total converter. Hence, reducing the EMI noise of power converter can help reduce …
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Resistance of a granular medium to normal impact of a rigid projectile
… the resisting forces on the projectile by -M dv/dt = Av² + Cz + D v > v<sub>c</sub> and by -M dv/dt = Bv + Cz + D 0 < v < v<sub>c</sub> where M = mass of projectile V = velocity of projectile at time t z = depth of penetration at time t A,B,C,D = constant coefficients. v<sub>c</sub> is a …
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Study on Zero Crossing Detection in CRM Totem-pole PFC Converter
… fast-switching GaN devices, which exhibit high dv/dt and di/dt. This noise can lead to false ZCD triggers, affecting PFC operation. First, this thesis investigates and characterizes sources of delay in ZCD, identifies the sources of variable delay, and examines the effect of sensing parasitic …
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Protection, Control, and Auxiliary Power of Medium-Voltage High-Frequency SiC Devices
… and academia. However, due to the high di/dt and high dv/dt during the switching transient, potential overcurrent, overvoltage, and gate failure can greatly reduce the reliability of implementing SiC MOSFETs in an MV system. By utilizing the parasitic inductance between the Kelvin- and the …
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HBC fuse models based on fundamental arc mechanisms.
… voltage. The arc-root voltage and the initial dv/dt values are influenced by filler characteristics and are able to precisely characterize the filler behaviour. The dv/dt, and consequently, the bum-back are instantaneous current density functions. The application of the above rules allows the …
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H. B. C. fuse models based on fundamental arc mechanisms
… voltage. " The arc-root voltage and the initial dv/dt values are influenced by filler characteristics and are able to precisely characterize the filler behaviour. " The dv/dt, and consequently the burn-back are instantaneous current density functions. The application of the above rules allows the …
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Atrial arrhythmogenesis in a murine model of mitochondrial insufficiency
… deficits in maximum rates of AP depolarization (dV/dt)max, and at the tissue level through prolonged AP latencies. Action potential duration (APD) was also significantly shorter in Pgc-1β-/- hearts at high heart rates. APD restitution has been linked to the pathogenesis of ventricular …
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Device Voltage Balancing from Device-level to Converter-level in High Power Density Medium Voltage Converter using 10 kV SiC MOSFETs
… much faster dynamic response (> 10 kHz bandwidth) or high switching-frequency will enable new electronic energy network architectures, like MVDC power delivery, underground solid-state power substation (SSPS), and high-density power electronics building block (PEBB); help drive the levelized …
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Reduction of Switching Losses in IGBT Power Modules
… lente sono caratterizzate da bassi valori di dv/dt e di/dt , causando perdite eccessive specialmente nelle applicazioni di potenza. Pertanto, per affrontare il problema in fase di progettazione avendo esigenze contrastanti è essenziale trovare una buona soluzione di compromesso.
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Modeling and Control of Parallel Three-Phase PWM Converters
… control issues of parallel three-phase pulse-width modulated (PWM) converters. The converters include three-phase boost rectifiers, voltage source inverters, buck rectifiers and current source inverters. The averaging of the parallel converters is performed based on a generic functional …
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Signal and power integrity analysis of bidirectional DC-DC converters for hybrid energy storage systems with EMI/EMC optimization
… (PCB) layout of switching regulators with fast dv/dt and di/dt edge rates to achieve electromagnetic interference (EMI) compliance standards. Furthermore, it focuses on comparative analysis and investigation of near-field noise emissions measured from three PCB designs each sharing the same …
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A Compact Three-Phase Multi-stage EMI Filter with Compensated Parasitic-Component Effects
With the advent of wide bandgap (WBG) semiconductor devices, the electromagnetic interference (EMI) emissions are more pronounced due to high slew rates in the form of high dv/dt and high di/dt at higher switching frequencies compared to the traditional silicon technology. To comply with the …
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Optimization of Power MOSFET for High-Frequency Synchronous Buck Converter
… on the switching process. Another model for dv/dt-induced false triggering-on relates the false-trigger-on voltage with the parasitic elements of the device and the circuits. Some techniques are proposed to reduce the simulation time of FEA in the circuit simulation. Based on this approach, …
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Enhanced Gate-Driver Techniques and SiC-based Power-cell Design and Assessment for Medium-Voltage Applications
… 1.2 kV, and 10 kV devices) are able to sustain dv/dt higher than 100 V/ns, have less than 5 nH gate loop inductance, and SC protection, turning off the device within 1.5 us. Even with the introduction of SiC MOSFETs, power devices remain the most reliability-critical component in the converter, …
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MES-DERIVED CARDIOMYOCYTES AS CELLULAR MODEL TO STUDY CARDIAC DISEASES: ALTERATIONS IN STRN AND GNB5 GENES
… rate and faster action potential depolarization (dV/dt) than WT, correlated with a larger fast INa conductance. Since in HEK cells downregulation of STRN was reported to destabilize microtubules and increase INa, immunofluorescence analysis confirmed the higher Na+ channel expression and a more …
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The impact of conventional and wide bandgap semiconductor PWM inverter EDM bearing currents on motor bearings.
The pulse width modulated (PWM) ac motor drive has revolutionized the industrial sector by drastically reducing energy consumption and improving the efficiency of industrial processes. To continue the transition towards an electrified society, power density in electric motor drives must continue to …
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Design of a 350 kW Silicon Carbide Based 3-phase Inverter with Ultra-Low Parasitic Inductance
… switching speed without disturbance from high dv/dt noise. Finally, the inverter is packaged into a complete system and tested under various conditions with a 3-phase inductive load simulating a motor load. The test results presented include output power and efficiency at various bus voltages, …
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