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Showing 1 to 2 of 2 for “"downhole communications system"”.
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Design of a High Temperature GaN-Based VCO for Downhole Communications
… This paper presents a high temperature VCO for downhole communication system. The proposed VCO is designed and prototyped using 0.25 μm GaN on SiC RF transistor which has extremely high junction temperature capability. Measurements show that the proposed VCO can operate reliably under ambient …
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A High Temperature Wideband Low Noise Amplifier
… maximum available gain (ZTCMAG) biasing for a downhole communication system. The proposed LNA is designed and prototyped using 0.25μm GaN on SiC RF transistor technology, which is chosen due to the high junction temperature capability. Measurements show that the proposed LNA can operate …