Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 10 of 10 for “"double pulse test"”.
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A Double-Sided Stack Low-Inductance Wire-Bondless SiC Power Module with a Ceramic Interposer
… package was designed, simulated, fabricated and tested. In this module, low temperature co-fired ceramic (LTCC) substrate with vias is utilized as an interposer of which both top and bottom sides are used as die attachment surfaces, the SiC MOSFET bare dies are flip-chip attached on the LTCC …
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Gating Methods for High-Voltage Silicon Carbide Power MOSFETs
… for the experimental setup using the double pulse test (DPT) is also discussed. Conclusions are made based on the performance of the device under multi-level turn-off, and future considerations for enabling the next generation high-voltage SiC MOSFETs are discussed. </p>
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Gallium Nitride Power Electronics using Machine Learning
… of the model is validated using simulation and double pulse test experiments at 450 V, 10 A test conditions. The developed behavioural model for Transhporm GaN HEMT is 95.2% accurate as the existing LT-spice manufacturer model, and is very much easier for power designers to handle, without the …
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Experimental Evaluation of Medium-Voltage Cascode Gallium Nitride (GaN) Devices for Bidirectional DC–DC Converters
… GaN power devices are examined through the double-pulse test (DPT) at different gate resistance values, device currents, and DC-bus voltages. Furthermore, the switching behavior and energy loss as well as the rate of voltage and current changes over the time are studied and analyzed at …
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Static and Dynamic Characterization of Silicon Carbide and Gallium Nitride Power Semiconductors
… of the devices are conducted by performing the double-pulse test. The switching characteristics are also tested at high temperature, with the presented results putting an emphasis on one of the devices. A comparison of the key characterization results summarizes the performance of the different …
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Failure Modes Analysis and Protection Design of a 7-level 22 kV DC 13.8 kV AC 1.1 MW Flying Capacitor Converter Based on 10 kV SiC MOSFET
… of the 10 kV SiC MOSFET was evaluated via a double pulse test (DPT), revealing negligible effects on the converter performance.
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Gate Driver for Phase Leg of Parallel Enhancement-Mode Gallium-Nitride (GaN) Transistors
… in the worst case, 500 ns, during a shortcircuit test. The phase leg survived a series of shortcircuit tests with shortcircuit protection. For the proposed protection scheme, the best-case reaction time (200 ns) is similar to others in the literature, while the shortcircuit peak current and peak …
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GaN-Based High-Efficiency, High-Density, High-Frequency Battery Charger for Plug-in Hybrid Electric Vehicle
… and output charge are characterized. In a double pulse test, GaN devices show fast switching speed. The loss estimation based on the characterization results shows a good match with the measurement results of a 500 kHz GaN-based boost converter. Topology selection is conducted to identify …
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Electrical and Thermal Characterizations of IGBT Module with Pressure-Free Large-Area Sintered Joints
… voltage rating of bare dies. Modules were also tested up to the rated current (150 A) and half of the rated voltage (600 V), which were the test conditions in the datasheet for commercial modules with the same voltage and current ratings. I-V characteristics of packaged devices were similar …
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Unlocking SiC MOSFET Switching Performance Through Packaging and Instrumentation
… a large stray inductance into the circuit under test. Insufficient bandwidth can slew the measured rise-time of the switching edge leading to incorrect switching loss measurement and can attenuate high-frequency resonances reducing their apparent severity. A distorted bandwidth can significantly …