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Showing 1 to 3 of 3 for “"double heterojunction bipolar transistor (DHBT)"”.

  1. Compact device modeling and millimeter-wave oscillator design for III-V HBT technology

    The double heterojunction bipolar transistor (DHBT), through its bandgap engineering, possesses several very favorable traits that allow it to operate at high frequencies while still maintaining impressive breakdown, linearity, and current driving characteristics. These traits make it a highly …

    uiuc Repository record for Compact device modeling and millimeter-wave oscillator design for III-V HBT technology (opens in a new tab)

  2. High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications

    Heterojunction bipolar transistors (HBTs) are widely used in high-speed mixed-signal, radio frequency, and communication ICs because of their high speed, high breakdown voltage, and high efficiency capabilities compared with Si bipolar junction transistors (BJTs) and complementary metal-oxide …

    uiuc Repository record for High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications (opens in a new tab)

  3. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications

    … circuits composed of compound semiconductor heterojunction bipolar transistors (HBTs). The subject of this work is the design and fabrication of HBTs based on InP and the III-V compounds compatible with epitaxial growth on this substrate. The hot electron injection effect is incorporated to …

    uiuc Repository record for Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications (opens in a new tab)