Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"dopant segregation"”.
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Modelling and fabrication of high performance Schottky-barrier SOI-MOSFETs with low effective Schottky barriers
… barrier of nickel silicide was investigated by dopant segregation at the silicide/Si interface, by the use of ultra-thin gate oxide and ultra-thin body SOI. Modelling of single-gated, fully depleted ballistic SOI Schottky barrier-MOSFET were performed with a self-consistent solution of the …
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Physical investigations of novel materials and structures for Nano-MOSFETs
… i) metal source/drain contacts with dopant segregation for reduced contact resistance and improved carrier injection; ii) variability of the Schottky-barrier height (SBH) in MOSFET contacts; iii) strained silicon as a high mobility channel material; iv) silicon nanowire (NW) MOSFETs …
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Impurity Incorporation and Redistribution During the Growth of Single-Crystal Semiconductors by Molecular Beam Epitaxy: A Theoretical and Experimental Study
… and theoretical results are presented for segregation of dopants in single-crystal semiconductors grown by molecular beam epitaxy (MBE). Experimental results include Sn doping of GaAs, Si doping of Ga(,x)Al(,x)As (where x ranges from 0 to 1), Zn-ion doping of GaAs, In doping of Si, and In …
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Understanding and Controlling the Surface Chemistry of Oxides to Enhance Catalytic Activity at Elevated Temperatures
… which results from the formation of surface dopant precipitates during their operation as air electrodes in solid oxide fuel/electrolysis cells. The 4 effects of polarization on the surface degradation are explained by two different driving forces for dopant segregation to the surface of the …
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Computational study of advanced semiconducting materials for next-generation electronic devices
… to their promise, including insufficiently high dopant activation and insufficiently low contact resistivity for InGaAs, and strong degree of dopant segregation towards the surface for Ga2O3. In this thesis, we address these challenges with a computational modeling approach, based on ab initio …
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Properties and device applications of silicon and silicon-germanium nanostructures with different dimensions
… layers of undoped Si in Si/Si:B multilayers, dopant segregation and strain can be avoided. Current-voltage and capacitance-voltage measurements show Schottky-barrier-like characteristics in these nano structures. The studied samples exhibit significant dependence of optical reflection on …
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Strained and unstrained silicon nanowire array MOSFETs : fabrication and physical analysis
… handling the variability of devices (e.g. random dopant fluctuation, line-edge roughness) as channels approach atomic scales. This thesis investigates the application of NWs as an alternative to conventional planar MOSFETs. For this the following imminent physical and material challenges are …