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Showing 1 to 1 of 1 for “"dopant penetration"”.
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Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies.
… stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050 °C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, …