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Showing 1 to 8 of 8 for “"displacement cascades"”.

  1. Nanoscale Patterning of Chemical Order Introduced by Displacement Cascades in Irradiated Alloys

    We test the predictions on the Ni3Al compound by combining molecular dynamics (MD) and KMC simulations. For 1MeV Kr and 70keV He ions, MD simulations are used to simulate the disordered zones, which are then incorporated into KMC simulations to reach long irradiation times. These simulations …

    uiuc Repository record for Nanoscale Patterning of Chemical Order Introduced by Displacement Cascades in Irradiated Alloys (opens in a new tab)

  2. Electronic effects in radiation damage simulations in metals

    … coupling. Results of the simulation of both displacement cascades and ion tracks, representing the low and high extremes of incident ion energy respectively, are presented. The eff�ect of annealing of pre-existing damage by electronic excitation is studied and the behaviour under swift heavy …

    ucl Repository record for Electronic effects in radiation damage simulations in metals (opens in a new tab)

  3. Determination of UO2 thin films mechanical properties under heavy ion irradiation using nanoindentation and finite element modeling

    … damage on UO2 films. First, study the effect of displacement cascades accompanying fission gas bubbles by irradiating 4600/5000Å UO2 films with 600 keV Kr+ ions at 25°C and 600°C. These irradiation conditions were used to confine radiation damage effects within the film. Second, study the effect …

    uiuc Repository record for Determination of UO2 thin films mechanical properties under heavy ion irradiation using nanoindentation and finite element modeling (opens in a new tab)

  4. Transmission electron microscopy investigation of ion implantation damage in gallium arsenide and other semiconductors

    … nature of the damage produced in individual displacement cascades. The in situ experiments at 30 K showed that amorphous zones are produced within isolated cascades with high probability. It was found that the efficiency of production of amorphous damage increases with increasing ion mass. …

    uiuc Repository record for Transmission electron microscopy investigation of ion implantation damage in gallium arsenide and other semiconductors (opens in a new tab)

  5. Computer simulation of defect evolution in lanthanum doped cerium dioxide under irradiation

    … pair evolution simulation and the overlapped displacement cascades simulation to explain the growth rate difference in various lanthanum doping conditions.

    uiuc Repository record for Computer simulation of defect evolution in lanthanum doped cerium dioxide under irradiation (opens in a new tab)

  6. Nanostructuring of Cu-TiB2 induced by ion irradiation

    … that this nanoprecipitation takes place in displacement cascades.

    uiuc Repository record for Nanostructuring of Cu-TiB2 induced by ion irradiation (opens in a new tab)

  7. Modeling of Effect of Alloying Elements on Radiation Damage in Metallic Alloys

    … of <100> dislocation loops from overlapping cascades on a pre-existing ½<111> dislocation loop in a series of Fe-Cr alloys with 0 – 15%Cr at 300 K. Our atomistic modeling directly demonstrates that the ratio of <100> to ½<111> dislocation loops decreases with the increasing Cr concentration, …

    vt Repository record for Modeling of Effect of Alloying Elements on Radiation Damage in Metallic Alloys (opens in a new tab)

  8. Radiation-induced microstructural and mechanical property modifications in advanced alloys

    … atoms in metals and alloys undergo successive displacements and point defects are created far exceeding the equilibrium concentrations. The material system is driven into thermodynamic nonequilibrium and the microstructure can be modified in many ways: dislocation loops are formed due to the …

    uiuc Repository record for Radiation-induced microstructural and mechanical property modifications in advanced alloys (opens in a new tab)