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Showing 1 to 10 of 10 for “"disilane"”.
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Growth of silicon(1-x) germanium(x) from disilane and digermane by gas-source molecular beam epitaxy
The growth rate R of Si(001), Ge(001), and $\rm Si\sb{1-x}Ge\sb{x}(001)$ films deposited on Si(001)2 $\times$ 1 substrates from $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ by gas-source molecular-beam epitaxy (GS-MBE) were determined as a function of temperature T$\sb{\rm s}$(300-950$\sp\circ$C) and …
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Low-pressure chemical vapor deposition by thermolysis of disilane for low-temperature fabrication of pn junction solar cells
… fabricate pn junction photovoltaic devices using disilane as the source gas. This work represents the first reported work on using disilane for fabrication of photovoltaic devices. Films doped with diborane showed high growth rates of approximately 45-150 Å/min for temperatures ranging from 450 to …
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Theoretical study of the molecular processes occurring during the growth of Silicon on Si(100) and SixGe1-x/Si(100)
… of the silyl species arising from silane and disilane and the surface diffusion process of the decomposition. An attempt was made to address several puzzles pertaining to the growth of silicon by GSMBE using silane and disilane as precursors. Our results on the energetics of various species …
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Low Temperature Selective Silicon Epitaxy at the Nanometer Scale
… the monohydride desorption peak, 540 °C. Disilane gas is used to deposit silicon and silicon-hydride species on the exposed clean silicon. For low temperatures (1.0x10-8 Torr) the STM tip can be used to remove hydrogen, allowing epitaxy to occur and a fresh silicon surface to be exposed. …
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Modification of an ultra-high-vacuum scanning tunneling microscope for silicon nanostructure fabrication
… subsequent silicon nanostructure growth using disilane gas.
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Microstructure and Electronic Structures of Er-Doped Si Nano-particles Synthesized by Vapor Phase Pyrolysis
… were synthesized via vapor-phase pyrolysis of disilane at Texas Christian University. To achieve monodisperse size distributions, a process with fast nucleation and slow growth was employed. Disilane was diluted to 0.48% with helium. A horizontal pyrolysis oven was maintained at a temperature …
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Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition
… as the source of active species and disilane (5 % by volume in helium) as both an active species source and a reducing agent to control the ratio of fluorine to carbon in the films. The basic properties for these low-k interlayer dielectric films were studied along with …
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Auf dem Wege zu einem Disilin RSi≡SiR Supersilylierte Silane, Silanide, Silylene, Disilene
… -Silane Die als Vorstufen sperrig substituierter Disilane R*X2Si–SiX2R*, Disilene R*XSi=SiXR* und Disiline R*Si≡SiR* wichtigen Monosupersilylsilane R*SiX3 (R* = SitBu3 = Supersilyl; X = H, F, Cl, Br, I, Me, Ph, tBu, OR, OTf) lassen sich durch Verbindungsaufbau (Austausch von Hal in Halogensilanen …
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Study of PECVD Films Containing Flourine and Carbon and Diamond Like Carbon Films for Ultra Low Dielectric Constant Interlayer Dielectric Applications
… 400C were deposited using tetrafluorocarbon and disilane (5% by volume in Helium) as precursors. The bulk dielectric constant (k) of the film was optimized from 2.0 / 2.2 to 1.8 / 1.91 as-deposited and after heat treatment. Films, with highly promising k-values but discarded for failing to meet …
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Silicium aus der Gasphase : Optimierung der Gasphasenabscheidung von Silicium aus Silan
… growth species being mainly silylene, SiH2, and disilane, Si2H6. Since Si3 is the largest silicon species in the reaction mechanism, its concentration is used as an indicator for gas phase nucleation. Model calculations have considered silicon deposition on a substrate and resulted in simulated …