Global ETD Search
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Showing 1 to 6 of 6 for “"dilute magnetic semiconductor"”.
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MOVPE growth and characterization of Cr-doped GaN
… the first time with the intention of producing a dilute magnetic semiconductor (DMS) with room temperature ferromagnetism. To this end the following growth parameters were investigated and optimized: carrier gas, precursor access and ratios, and growth temperature as well as post growth annealing. …
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Many-body contributions to spin relaxation in semiconductors
… driven by the spin-orbit interaction in semiconductors, spin relaxation describes the rate at which spin polarized particles return to an equilibrium spin distribution. This is generally in competition with the goals of spintronic devices which generate out-of-equilibrium spin populations …
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Electrical control of spin dynamics in spin-orbit coupled ferromagnets
… for the development of efficient scalable magnetic memories. In materials with broken inversion symmetry and spin-orbit coupling, electrical current can exert a torque on a local magnetisation. In the studies presented here, a microwave current-induced ferromagnetic resonance (spin-orbit …
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The study of weak ferromagnetism by andreev reflection spin spectroscopy and development of bimorph electro-thermal actuators
… ferromagnet MnSi changes as it undergoes magnetic phase transition from helical to conical to induced ferromagnetic. Also, unconventional conductance with enhanced Andreev reflection with amplitude more than two, and conductance oscillations outside superconducting gap indicate the …
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Magneto-Optical Effects in Manganese-doped Lead Halide Perovskite
Magnetic doping holds a great potential for tailoring material properties of semiconductors via control over exciton-dopant interactions. Hybrid metal-halide perovskites are a new class of high-performance solution-processable semiconductors which combine remarkable optoelectronic performance with …
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Character of the electronic states near the metal-insulator transition in Gallium Manganese Arsenide
… metal-insulator transition in the ferromagnetic semiconductor Ga1-xMnxAs is studied by cross sectional scanning tunneling microscopy. 200nm thick samples grown by MBE at UCSB with doping levels from 1.5%, close the metal-insulator transition, to 5%, deep into the metallic regime, were …