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Showing 1 to 20 of 35 for “"diffusion barriers"”.

  1. Development of Ti-Si-N and Ta-Si-N as diffusion barriers

    … film deposition. The properties of the films as diffusion barriers between Cu and Si were studied using sheet resistance measurements, X-ray diffractometry (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), auger electron …

    must-thes Repository record for Development of Ti-Si-N and Ta-Si-N as diffusion barriers (opens in a new tab)

  2. Diffusion Barriers/Adhesion Promoters. Surface and Interfacial Studies of Copper and Copper-Aluminum Alloys

    … to study the interaction between copper and the diffusion barrier/adhesion promoter. The behavior of copper sputter-deposited onto sputter-cleaned tantalum nitride is investigated. The data show that copper growth on tantalum nitride proceeds with the formation of 3-D islands, indicating poor …

    unt Repository record for Diffusion Barriers/Adhesion Promoters. Surface and Interfacial Studies of Copper and Copper-Aluminum Alloys (opens in a new tab)

  3. Instrumentation For the Study of Tantalum Diffusion Barriers Between Silicon Substrates and Copper Films

    … to readily diffuse into silicon; therefore, a diffusion barrier between silicon and copper is needed. Currently tantalum and tantalum nitride are two materials that have been successfully used as diffusion barriers, but a detailed study of the physical properties that affect their diffusion …

    mo-state Repository record for Instrumentation For the Study of Tantalum Diffusion Barriers Between Silicon Substrates and Copper Films (opens in a new tab)

  4. Tantalum- and ruthenium-based diffusion barriers/adhesion promoters for copper/silicon dioxide and copper/low κ integration.

    … TaSiN, and indicate that Si-modified Ta barriers should maintain Cu wettability under oxidizing conditions for Cu interconnect applications. XPS has been used to study the reaction of tert-butylimino tris(diethylamino) tantalum (TBTDET) with atomic hydrogen on SiO2 and organosilicate …

    unt Repository record for Tantalum- and ruthenium-based diffusion barriers/adhesion promoters for copper/silicon dioxide and copper/low κ integration. (opens in a new tab)

  5. Diffusion Challenges for Innovation in Technology-Intensive Industries

    … fail on the market. Non-adoption and slow diffusion represent a high risk for companies in technology-intensive industries when looking to innovate, develop, market and launch a new technology. Its diffusion in the market is a major challenge for marketing. The consequence of a failed …

    plymouth Repository record for Diffusion Challenges for Innovation in Technology-Intensive Industries (opens in a new tab)

  6. Transport in Low Pressure Plasma Reactors for Materials Processing

    … few mTorr is being increasingly used to deposit diffusion barriers and Cu seed layers into high aspect ratio trenches. Understanding plasma-substrate interactions will be critical to designing the next generation processes as the industry transitions to the 45-nm node. In this work, IMPVD using a …

    uiuc Repository record for Transport in Low Pressure Plasma Reactors for Materials Processing (opens in a new tab)

  7. Silver-magnesium thin film interactions in an oxidzing ambient

    … To overcome these stability problems, we need diffusion barriers to prevent interdifusion of Ag into SiO2, an adhesion promoter to improve adherence, and a passivation layer to protect the silver against corrosion. Ag(200 nm)/Mg(50 nm) bilayer structure on SiO2 substrates were annealed at …

    western-cape Repository record for Silver-magnesium thin film interactions in an oxidzing ambient (opens in a new tab)

  8. Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration

    … interconnect scheme requires the development of diffusion barrier/adhesion promoter materials that provide excellent performance in preventing the diffusion and intermixing of Cu into the adjacent dielectrics. The integration of Cu with low-k materials may decrease RC delays in signal propagation …

    unt Repository record for Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration (opens in a new tab)

  9. Effective even when neglected: Farmer groups and the diffusion of agroforestry innovations in rural communities of Eastern Africa

    … of development-oriented farmer groups to the diffusion of innovations in rural communities of Kenya and Ethiopia, to identify the key factors that determine the effectiveness of diffusion, and to derive recommendations that aim at better utilizing the potential of groups for rural extension …

    qucosa-diss

  10. TEM-Untersuchungen zum Gefüge und zu mechanischen Spannungen in Metallisierungen für SAW-Bauelemente

    … The Cu based metallizations with TaSiN diffusion barriers were also investigated in this work. The barrier layers are necessary to impede the oxygen diffusion into the Cu layer and the Cu diffusion into the piezoelectric substrate. Also in this work the analytical TEM were used as a tool …

    qucosa-diss

  11. Integration of freestanding polyelectrolyte multilayer membranes in larger scale structures

    … miniaturized devices. Membranes, integrated as diffusion barriers or filters in micron scale devices need to fulfill equivalent requirements as the natural systems, in particular mechanical stability and functionality (e.g. permeability), while being only tens of nm in thickness to allow fast …

    potsdam-diss Repository record for Integration of freestanding polyelectrolyte multilayer membranes in larger scale structures (opens in a new tab)

  12. Chemistry, Detection, and Control of Metals during Silicon Processing

    … control, which is the effectiveness of metal diffusion barriers (e.g. Ru) in holding a metal of interest, (e.g. Cu), where it is wanted while preventing it from migrating to places where it is not wanted on the silicon wafer. Chapter 6 concludes with an overview of the general chemical …

    unt Repository record for Chemistry, Detection, and Control of Metals during Silicon Processing (opens in a new tab)

  13. Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films

    … and electrical stresses, requiring the use of barriers to inhibit diffusion, adding to the insulator thickness and delay time, or replacement of SiO2 with new insulator materials that can inhibit diffusion while enabling Cu wetting. This study proposes modified amorphous silicon carbon hydrogen …

    unt Repository record for Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films (opens in a new tab)

  14. Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates

    … of Cu with various substrates, including diffusion barriers and adhesion promoters, is essential to achieve this goal. The objective of this research is to develop novel organic polymers as Cu/low-k interfacial layers and to investigate popular barrier candidates, such as clean and …

    unt Repository record for Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates (opens in a new tab)

  15. Lipid and Protein Sorting by, and Generation of, Membrane Curvature in Model Systems

    … lipid sorting by curvature, as well as present diffusion barriers to enable selective sorting of lipids and proteins. Finally, the curvature generation of Drosophila amphiphysin N-BAR domain is quantitatively assessed through the tube-pulling assay as before but performed using homogenous lipid …

    penn Repository record for Lipid and Protein Sorting by, and Generation of, Membrane Curvature in Model Systems (opens in a new tab)

  16. Impact of Structure and Defect Modification on Vanadium Oxide for Alkali-ion Battery Electrodes

    … which directly alter the migration energy and diffusion barriers the alkali-ion must overcome. Lithium-ion was chosen for structural (kinetic) examination as it is a mature technology that has been extensively investigated; sodium-ion was chosen for defect manipulation because the larger size …

    washington Repository record for Impact of Structure and Defect Modification on Vanadium Oxide for Alkali-ion Battery Electrodes (opens in a new tab)

  17. Process Evaluation and Characterization of Tungsten Nitride as a Diffusion Barrier for Copper Interconnect Technology

    … toward achieving this goal is the development of diffusion barriers that resolve the Cu and dielectric incompatibility. The focus of this research examines the potential use of tungsten nitride as a diffusion barrier by characterizing the interfacial properties with Cu and evaluating its process …

    unt Repository record for Process Evaluation and Characterization of Tungsten Nitride as a Diffusion Barrier for Copper Interconnect Technology (opens in a new tab)

  18. Scanning Tunneling Microscopy Studies of Cluster Diffusion in a Highly Mismatched system:Copper on Silver(111)

    … tunneling microscopy to investigate cluster diffusion phenomena in both the early stages of nucleation and growth and the late stages for a highly mismatched system, Cu on Ag(111). In particular, activation energies and prefactors for cluster diffusion are measured directly by tracking …

    uiuc Repository record for Scanning Tunneling Microscopy Studies of Cluster Diffusion in a Highly Mismatched system:Copper on Silver(111) (opens in a new tab)

  19. Scanning Tunneling Microscopy Studies of Cluster Diffusion in a Highly Mismatched System: Copper on Silver(111)

    … tunneling microscopy to investigate cluster diffusion phenomena in both the early stages of nucleation and growth and the late stages for a highly mismatched system, Cu on Ag(111). In particular, activation energies and prefactors for cluster diffusion are measured directly by tracking …

    uiuc Repository record for Scanning Tunneling Microscopy Studies of Cluster Diffusion in a Highly Mismatched System: Copper on Silver(111) (opens in a new tab)

  20. Lattice gas models and simulations of epitaxial growth

    … are used to approximate the corresponding energy barriers if detailed knowledge about the barriers is not available. Finally, the efficient implementation of the MC kinetics using a rejection-free algorithm is described. In chapter 2, we present a solid-on-solid lattice gas model which aims at the …

    wurz-thes Repository record for Lattice gas models and simulations of epitaxial growth (opens in a new tab)

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