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Showing 1 to 6 of 6 for “"diffusion barrier layers"”.

  1. Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films

    … and electrical stresses, requiring the use of barriers to inhibit diffusion, adding to the insulator thickness and delay time, or replacement of SiO2 with new insulator materials that can inhibit diffusion while enabling Cu wetting. This study proposes modified amorphous silicon carbon hydrogen …

    unt Repository record for Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films (opens in a new tab)

  2. Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates

    … of Cu with various substrates, including diffusion barriers and adhesion promoters, is essential to achieve this goal. The objective of this research is to develop novel organic polymers as Cu/low-k interfacial layers and to investigate popular barrier candidates, such as clean and …

    unt Repository record for Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates (opens in a new tab)

  3. Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration

    … interconnect scheme requires the development of diffusion barrier/adhesion promoter materials that provide excellent performance in preventing the diffusion and intermixing of Cu into the adjacent dielectrics. The integration of Cu with low-k materials may decrease RC delays in signal propagation …

    unt Repository record for Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration (opens in a new tab)

  4. Chemically Enhanced Physical Vapor Deposition (Cepvd) of Tantalum Nitride-Based Films for Diffusion Barrier Layers Used in ULSI Devices

    A zero-order semi-empirical model is established allowing the attachment of physical understanding and CEPVD experimental phenomena. The model stems from the knowledge of reactive sputtering and PECVD processes as well as the acquired CEPVD experiment results. It correlates the processing …

    uiuc Repository record for Chemically Enhanced Physical Vapor Deposition (Cepvd) of Tantalum Nitride-Based Films for Diffusion Barrier Layers Used in ULSI Devices (opens in a new tab)

  5. Ion assisted magnetron sputtering of tantalum thin film deposition and characterization

    … desired in most industrial applications, such as diffusion barrier layers in integrated circuits, metallic corrosion protective layers, and in biomedical devices. The [beta]-phase Ta is hard and brittle, and its presence may compromise the film performance. Bulk Ta metal has the [alpha]-phase …

    njit Repository record for Ion assisted magnetron sputtering of tantalum thin film deposition and characterization (opens in a new tab)

  6. Measurements and Modeling of Ti and TiN Sputtering

    Made available in DSpace on 2017-07-06T18:56:01Z (GMT). No. of bitstreams: 3 Ranjan_Rajiv_MS.pdf: 1112075 bytes, checksum: 5abfc46cfff7d7a266b45252b6ac766b (MD5) Ranjan_Rajiv_MS_ABS.pdf: 8774 bytes, checksum: ae4f619491f3fe75dbdc9eeaf69df521 (MD5) license.txt: 4813 bytes, checksum: …

    uiuc Repository record for Measurements and Modeling of Ti and TiN Sputtering (opens in a new tab)