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Showing 1 to 1 of 1 for “"dielectric vertical sidewall appended edge termination (DiVSET)"”.

  1. High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique

    … leakage current components. Second, inefficient edge termination (ET) designs are incapable of reaching ideal parallel-plane breakdown voltage. This work aims to overcome the aforementioned problems in GaN power devices through innovative designs compatible with a selective-area processing (SAP) …

    uiuc Repository record for High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique (opens in a new tab)