Global ETD Search
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Showing 1 to 2 of 2 for “"dielectric breakdown induced epitaxy (DBIE)"”.
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GATE DIELECTRIC BREAKDOWN PHYSICAL ANALYSIS AND STUDIES -2D MODELING OF BREAKDOWN THERMAL EFFECT
… oxide is indeed important to understand the soft breakdown (SBD) and hard breakdown (HBD) mechanisms of a narrow channel MOSFET. During HBD or under favorable condition of SBD, silicon epitaxy growth is observed at the cathode side of the MOSFET. This epitaxy growth is named dielectric …
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GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS
… on the failure mechanisms of ultrathin dielectric gate breakdown during constant voltage stress. It is verified that the dielectric breakdown induce epitaxy (DBIE) plays an important role in the device electrical behavior after breakdown. Our model is helpful in the study of the …