Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 63 for “"dielectric breakdown"”.
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Dielectric Breakdown of Silver Azide
The breakdown of single crystals of heavy metal azides has been investigated. In silver azide, the low-field conduction is by mobile interstitial cations and their enthalpies ,of formation and hopping have been determined from the Arrhenius plot of the conductivity. Based on AC conductivity · …
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Studies of dielectric breakdown under pulsed power conditions
… pulsed power applications, the electrical breakdown strength (BDS) of ceramic dielectrics, particularly titanium oxide and ceramic/epoxy composite materials, are being characterized and studied. Results of research to-date show that the dense titania ceramics with nanocrystalline grain size …
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The mechanism of electrosurgical coagulation : steam evolution versus dielectric breakdown
Thesis (B.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1982.
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GATE DIELECTRIC BREAKDOWN PHYSICAL ANALYSIS AND STUDIES -2D MODELING OF BREAKDOWN THERMAL EFFECT
… oxide is indeed important to understand the soft breakdown (SBD) and hard breakdown (HBD) mechanisms of a narrow channel MOSFET. During HBD or under favorable condition of SBD, silicon epitaxy growth is observed at the cathode side of the MOSFET. This epitaxy growth is named dielectric …
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GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS
… on the failure mechanisms of ultrathin dielectric gate breakdown during constant voltage stress. It is verified that the dielectric breakdown induce epitaxy (DBIE) plays an important role in the device electrical behavior after breakdown. Our model is helpful in the study of the …
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Time dependent dielectric breakdown in novel GaN metal-insulator-semiconductor high electron mobility transistors
… industrial GaN MIS-HEMTs: time dependent dielectric breakdown (TDDB) of the gate insulator. TDDB occurs when a high electric field causes an accumulation of defects in the gate dielectric, forming a conducting path and rendering the device unusable. This is of major concern in GaN …
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SPACE CHARGE LIMITED DIELECTRIC BREAKDOWN, OR: HOW I LEARNED TO STOP WORRYING AND LOVE APPROXIMATIONS
Space charge induced dielectric breakdown in spacecraft components exposed to energetic cosmogenic radiation has remained poorly understood despite decades of research. In this work, breakdown in electron irradiated polymethyl methacrylate is described by a new 1D space charge limited front (SCLF) …
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First-Principles Study of Band Alignment and Electronic Structure at Metal/Oxide Interfaces: An Investigation of Dielectric Breakdown
Oxide dielectric breakdown is an old problem that has been studied over decades. It causes power dissipations and irreversible damage to the electronic devices. The aggressive downscaling of the device size exponentially increases the leakage current density, which also raises the risk of …
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Optimization of Polymer-based Nanocomposites for High Energy Density Applications
… lightweight and compact high energy density dielectrics. This limitation in performance is due to the trade-off between dielectric constant and dielectric breakdown. Insulating polymers are of interest owing to their high inherent electrical resistance, low dielectric loss, flexibility, light …
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Dielectric reliability in GaN metal-insulator-semiconductor high electron mobility transistors
… obstacles, one of which is Time-Dependent Dielectric Breakdown (TDDB) of the gate dielectric. Under prolonged electrical stress, the gate dielectric suffers a catastrophic breakdown that renders the transistor useless. Understanding the physics behind gate dielectric breakdown and …
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Radiation effects in metal-oxide-semiconductor capacitors
… an investigation of the nature and causes of dielectric breakdown in MOSCs has revealed that intrinsic breakdown is a two-stage process dominated by charge injection in a pre-breakdown stage; this is associated with localised high-field injection of carriers from the semiconductor substrate to …
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Dielectric reliability in high-voltage GaN metal-insulator-semiconductor high electron mobility transistors
… widespread commercial deployment. Time-dependent dielectric breakdown (TDDB), a catastrophic condition arising after prolonged high-voltage gate stress, is a particularly important concern. This thesis investigates this crucial reliability issue in depth. Using a robust characterization strategy, …
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Integration of pentacene-based thin film transistors via photolithography for low and high voltage applications
… OTFT performance is tuned by engineering the dielectric constant of the gate insulator and the insulator/semiconductor interface. Full integration is enabled by a low temperature photolithographic patterning process that is compatible with flexible substrates. Devices and circuits for low …
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Domain Switching and Microcracking in Ferroelectric Single Crystals and Polycrystalline Ceramics
… technique. During electrical cycling, transient dielectric breakdown and local melting in the amorphous grain boundary layers were the likely precursors to fracture. Assisted by the incompatible stresses, cavitation took place. The increase of the density and the linkage of these cavities …
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Metal-Aluminum Oxide Interactions: Effects of Surface Hydroxylation and High Electric Field
… Under STM induced high electric fields, dielectric breakdown of thin Al2O3 occurs at 12.3 } 1.0 MV/cm. At lower electric fields, small voids that are 2-8 A deep are initiated at the oxide/metal interface and grow wider and deeper into the metal substrate, which eventually leads to either …
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Electrical Breakdown of Thermal Spray Alumina Ceramic Applied to AlSiC Baseplates Used in Power Module Packaging
… basically causes the coatings to have a lower dielectric breakdown voltage and a higher leakage current at normal operating voltages. This problem can be eliminated by manufacturing the electronic power modules in a controlled environment and packaging the devices in a hermetically sealed …
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Modeling and simulations of diphasic composites for development of high energy density dielectrics
"This research is focused on diphasic dielectric composites for high energy density storage applications in pulsed power and power distribution systems. Composite materials are particularly attractive because they can synergistically combine high permittivity with high breakdown strength of the …
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Breakdown in high voltage, high energy density multilayer ceramic capacitors
"Causes of breakdown, both mechanical and electrical, in high voltage, high energy density, BaTiO₃ multilayer ceramic capacitors were studied. The flexural strength of the capacitors was 96 +/- 13 MPa. Failure was due to surface defects or pores close to the surfaces of the samples. The dielectric …
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Reliability and Data Analysis of Wearout Mechanisms for Circuits
… testing for front-end-of-line time-dependent dielectric breakdown (FEOL TDDB). The separation of wearout mechanisms for circuits will be investigated, and the identification of failure modes for the failure samples will be analyzed. SRAMs and ring oscillators will be used to study the failure …
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