Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 11 of 11 for “"device materials"”.
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High pressure spectroscopic studies of organic device materials
A comparison of photoluminescence spectra of as-is and thermally cycled di-octyl substituted polyfluorene (PF8) under pressure has been used to disentangle inter- and intra-chain interactions. Raman study of this system shows a strong electron-phonon interaction between the Raman phonon and the …
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Computational modeling of defects in nanoscale device materials
… of point defects in technologically relevant materials. Identifying the atomistic origin of defects observed in the electrical characteristics of electronic devices has been a long-term goal of first-principles methods. First principles simulations are performed in this thesis, consisting of …
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Electromagnetic Modelling of Superconducting Sensor Designs
… current Superconducting QUantum Interference Device (SQUID) magnetometers made of YBCO (YBa2Cu3O7-x) was considered. The inductances and effective areas were calculated using the software package 3D-MLSI. Resolution and reliability issues were first tested on simple superconducting systems, …
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Diagnosis of operational changes in microelectromechanical systems via fault detection
As microelectromechanical systems (MEMS) devices migrate into progressively more critical systems, the reliability these devices have to demonstrate must increasingly improve. Current research in the reliability of MEMS has succeeded in increasing the reliability of commercialized MEMS before they …
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MOCVD growth of In GaP-based heterostructures for light emitting devices
In this work, we examine fundamental materials processes in the growth of indium gallium phosphide (InGaP) via metalorganic chemical vapor deposition (MOCVD). In particular, we realize improvements in the epitaxial integration of high-quality InGaP device materials on non-standard platforms, such …
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Capture and control of excitations
… photons and excitons, in optoelectronic devices is important to optimizing their performance. Devices such as luminescent solar concentrators and signal concentrators that increase the efficiency of solar energy production and the speed of point-to-point communication, respectively, will …
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Conformable and robust microfluidic force sensors for orthopaedic surgery
… a high dependence on the type of elastomer, the device dimensions, and the magnitude and frequency of the applied force. The required properties of the sensor, such as the maximum detectable force, were optimised by material choice and device design, both experimentally and using finite element …
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Design, Modeling and Analysis of Non-classical Field Effect Transistors
… material properties. Therefore, novel device materials and structures are desirable to fuel further evolution of semiconductor technologies. In this dissertation, I have proposed innovative device structures and addressed design considerations of those non-classical field effect …
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Plastic Deformation in Complex Crystal Structures
Many materials with complex crystal structures have attractive properties, including high specific strength, good creep resistance, oxidation resistance, often through high silicon or aluminium content. This makes them of interest for high temperature structural applications, but the use of many …
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The Impact of Ventricular Assist Device Prior to Transplantation on Morphological Parameters in Cardiac Allografts /// Въздействие на вентрикуларните помощни устройства преди трансплантация върху морфологичните параметри при сърдечните алографи
… that prolonged use of ventricular assist device (VAD) therapy may result in cardiac allograft dysfunction, as MCS patients show a higher frequency of antibody-mediated rejection (AMR) episodes. We aimed to analyze the effects of MCS on cardiac AMR with regards to capillary C3d and C4d …
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Germanium tin nanowires: synergy at the nanoscale
… alternative, Si compatible, scalable, tuneable device materials over the past number of years has led to a focus on group IV elements. Alloying group IV semiconductors, such as Ge or Si with group IV metals such as Sn and Pb, can lead to direct bandgap semiconductors, as in III-V materials, but …