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Showing 1 to 2 of 2 for “"device health"”.

  1. Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress

    … behavior of commercial EPC90122 GaN HEMT devices under controlled high-temperature operating conditions. Accelerated degradation testing is conducted by heating the devices within a thermal chamber at 150 °C under high-current stress. An external circuit is connected to the switch node of …

    uiuc Repository record for Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress (opens in a new tab)

  2. In-situ impedance characterization for assessing SiC MOSFETs reliability

    … high-frequency current (≥ 2 MHz) into the device and isolating the resulting voltage component induced by this injection. By applying algebraic operations, the drain-to-source impedance is characterized and separated into its sub-components: on-state resistance and package inductance. …

    uiuc Repository record for In-situ impedance characterization for assessing SiC MOSFETs reliability (opens in a new tab)