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Showing 1 to 3 of 3 for “"depth-resolved cathodoluminescence spectroscopy"”.

  1. THE ROLE OF NATIVE POINT DEFECTS AND SURFACE CHEMICAL REACTIONS IN THE FORMATION OF SCHOTTKY BARRIERS AND HIGH N-TYPE DOPING IN ZINC OXIDE

    … results presented here use a complement of depth-resolved cathodoluminescence spectroscopy (DRCLS), atomic force microscopy (AFM), Kelvin probe force microscopy (KPFM), and surface photovoltage spectroscopy (SPS) to show that surface treatment and processing plays a significant role in the …

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  2. Process Dependence of Defects and Dopants in Wide Band Gap Semiconductor and Oxides

    … has higher k value, combined X-ray absorption spectroscopy (XAS) and depth-resolved cathodoluminescence spectroscopy (DRCLS) measurements identified the defects in Ge doped HfO<sub>2</sub>. Besides, DRCLS of GeO<sub>2</sub>/Ge structure demonstrated that different annealing temperature will …

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  3. Spectroscopic and Electrical Characterization of SiO<sub>x</sub> and GaN Device Structures as a Function of Irradiation

    … and annealed PECVD SiO<sub>x</sub>, spatially resolved depth resolved cathodoluminescence spectroscopy (DRCLS) and spectroscopic elipsometry confirmed a strong electron trap related to a-Si nanoclusters at 3.87 eV and nc-Si grains at 3.92 eV below the conduction band of SiO<sub>2</sub>, …

    ohiolink Repository record for Spectroscopic and Electrical Characterization of SiO<sub>x</sub> and GaN Device Structures as a Function of Irradiation (opens in a new tab)