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Showing 1 to 12 of 12 for “"delta doped"”.
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Monte Carlo Simulation Of Hole Transport And Terahertz Amplification In Multilayer Delta Doped Semiconductor Structures
… transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte-Carlo simulation of hot hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical or …
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Electronic and Optical Properties of Silicon Based Semiconductors With Reduced Dimension: A Theoretical Study
… successfully studied silicon surface, phosphorus delta-doped silicon, and Hydrogen passivated silicon clusters. To study the systems efficiently, we have developed planar Wannier formula with envelope functions, and GWA formula in symmetrized plane-wave basis. The formulas are successfully applied …
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Silicon Nanoelectronic Devices Fabricated by Ultra-High Vacuum, Scanning Tunneling Microscope Nanolithography
… device geometries. Two-dimensional unpatterned delta-doped samples yield ohmic conduction and sharp positive magnetoconductance: a characteristic of a weakly localized electron gas. The 2D electron density (∼ 1 x 1014 cm-2) is significantly higher than modulation-doped structures. This …
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Investigation of lateral gated quantum devices in Si/SiGe heterostructures
… Si/SiGe quantum dots was to fabricate them in delta doped heterostructures. We provide evidence that the delta doping layer in these heterostructures provides a parallel conduction path, which prevents one from creating controllable quantum dots. Instead, it may be more favorable to supply …
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Thermal and low-energy ion doping of silicon(001) during molecular beam epitaxy: Dopant incorporation kinetics and mechanisms
… by controlling the ion current; layers $\delta$-doped with a 250 V Sb-ion beam were $\le$2 nm wide.
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Gate current modeling of tunneling real-space transfer transistor with negative differential resistance
… al. in 2010 [1], they demonstrate an InGaAs and \delta-doped GaAs dual-channel TRSTT device with an \lambda-type NDR in a low drain-source voltage (VDS), which reaches a peak-to-valley current ratio of 3.3. Meanwhile, the gate-source current sharply increases at the same applied VDS. The thesis …
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Properties and device applications of silicon and silicon-germanium nanostructures with different dimensions
… these properties in two-dimensional (2D) Si/Si:B delta-doped multilayers, 2D Si/Si_{1-x}Ge_x planar multilayers, three-dimensional (3D) Si/Si_{1-x}Ge_x cluster multilayers, one-dimensional (1D) Si NWs and 1D Si/Ge NW heterojunctions (HJs). Raman scattering and photoluminescence measurements show …
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Sulfur Implanted GaSb for Non-Epitaxial Photovoltaic Devices
… This technique was used on an unintentionally-doped p-type GaSb substrate to create a + /p junction. The implant process succeeded in producing a potential barrier similar to that of a hole-majority camel diode with a thin delta-doped region suitable for collecting diffused carriers from the …
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Characterization of type-II GaSb quantum rings in GaAs solar cells
… influence of the location of QR layers and their delta doping within the solar cell is investigated in this work. Devices with 5 layers of delta doped QRs placed in the intrinsic, n and p regions of a GaAs solar cell are experimentally investigated and the deduced values of Jsc, Voc, Fill factor …
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The Influence of Contact Transparency on the Superconducting Proximity Effect in Thin Semiconducting Films
… in-situ junctions between niobium and heavily doped n-GaAs and n-InAs were fabricated via molecular beam epitaxy. In order to reduce the Schottky barrier, a graded and delta-doped InGaAs cap was inserted at the interface. Careful construction of the doping profile in the cap allows for …