Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 12 of 12 for “"delta doped"”.

  1. Measurement of optically generated charge with a Si delta-doped GaAs electrometry structure

    cambridge

  2. Monte Carlo Simulation Of Hole Transport And Terahertz Amplification In Multilayer Delta Doped Semiconductor Structures

    … transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte-Carlo simulation of hot hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical or …

    ucf

  3. Electronic and Optical Properties of Silicon Based Semiconductors With Reduced Dimension: A Theoretical Study

    … successfully studied silicon surface, phosphorus delta-doped silicon, and Hydrogen passivated silicon clusters. To study the systems efficiently, we have developed planar Wannier formula with envelope functions, and GWA formula in symmetrized plane-wave basis. The formulas are successfully applied …

    uiuc Repository record for Electronic and Optical Properties of Silicon Based Semiconductors With Reduced Dimension: A Theoretical Study (opens in a new tab)

  4. Silicon Nanoelectronic Devices Fabricated by Ultra-High Vacuum, Scanning Tunneling Microscope Nanolithography

    … device geometries. Two-dimensional unpatterned delta-doped samples yield ohmic conduction and sharp positive magnetoconductance: a characteristic of a weakly localized electron gas. The 2D electron density (∼ 1 x 1014 cm-2) is significantly higher than modulation-doped structures. This …

    uiuc Repository record for Silicon Nanoelectronic Devices Fabricated by Ultra-High Vacuum, Scanning Tunneling Microscope Nanolithography (opens in a new tab)

  5. Investigation of lateral gated quantum devices in Si/SiGe heterostructures

    … Si/SiGe quantum dots was to fabricate them in delta doped heterostructures. We provide evidence that the delta doping layer in these heterostructures provides a parallel conduction path, which prevents one from creating controllable quantum dots. Instead, it may be more favorable to supply …

    mit Repository record for Investigation of lateral gated quantum devices in Si/SiGe heterostructures (opens in a new tab)

  6. Gate current modeling of tunneling real-space transfer transistor with negative differential resistance

    … al. in 2010 [1], they demonstrate an InGaAs and \delta-doped GaAs dual-channel TRSTT device with an \lambda-type NDR in a low drain-source voltage (VDS), which reaches a peak-to-valley current ratio of 3.3. Meanwhile, the gate-source current sharply increases at the same applied VDS. The thesis …

    uiuc Repository record for Gate current modeling of tunneling real-space transfer transistor with negative differential resistance (opens in a new tab)

  7. Properties and device applications of silicon and silicon-germanium nanostructures with different dimensions

    … these properties in two-dimensional (2D) Si/Si:B delta-doped multilayers, 2D Si/Si_{1-x}Ge_x planar multilayers, three-dimensional (3D) Si/Si_{1-x}Ge_x cluster multilayers, one-dimensional (1D) Si NWs and 1D Si/Ge NW heterojunctions (HJs). Raman scattering and photoluminescence measurements show …

    njit Repository record for Properties and device applications of silicon and silicon-germanium nanostructures with different dimensions (opens in a new tab)

  8. Sulfur Implanted GaSb for Non-Epitaxial Photovoltaic Devices

    … This technique was used on an unintentionally-doped p-type GaSb substrate to create a + /p junction. The implant process succeeded in producing a potential barrier similar to that of a hole-majority camel diode with a thin delta-doped region suitable for collecting diffused carriers from the …

    vt Repository record for Sulfur Implanted GaSb for Non-Epitaxial Photovoltaic Devices (opens in a new tab)

  9. Characterization of type-II GaSb quantum rings in GaAs solar cells

    … influence of the location of QR layers and their delta doping within the solar cell is investigated in this work. Devices with 5 layers of delta doped QRs placed in the intrinsic, n and p regions of a GaAs solar cell are experimentally investigated and the deduced values of Jsc, Voc, Fill factor …

    lancaster Repository record for Characterization of type-II GaSb quantum rings in GaAs solar cells (opens in a new tab)

  10. The Influence of Contact Transparency on the Superconducting Proximity Effect in Thin Semiconducting Films

    … in-situ junctions between niobium and heavily doped n-GaAs and n-InAs were fabricated via molecular beam epitaxy. In order to reduce the Schottky barrier, a graded and delta-doped InGaAs cap was inserted at the interface. Careful construction of the doping profile in the cap allows for …

    uiuc Repository record for The Influence of Contact Transparency on the Superconducting Proximity Effect in Thin Semiconducting Films (opens in a new tab)