Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 21 for “"defect generation"”.
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Effect of point defect generation on transient enhanced diffusion
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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Ic-Rest(2): A Time-to-Market Driven IC Reliability Statistics Tool
… and novel solutions to the SiO2 and Si-SiO2 defect generation rate equations (in time and space) under static and dynamic operation. The predicted failure statistics are best described by the generalized Gamma-distribution (or more accurately the generalized B-distribution) and on a Gumbel …
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Stress effects on atomistic kinetic transitions
… a commonly studied and well understood vacancy generation and migration to an adjacent lattice cite in FCC copper and HCP titanium. The method was then applied to transitions of increasing complexity: point defect generation in a perfect copper crystal, and grain boundary transitions in the …
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Block copolymer self-assembly - a computational approach towards novel morphologies
… post template to study system resilience towards defect creation. Template shear-like distortion seemed to govern local defect generation. Defect clusters with symmetries compatible with that of the BCP showed enhanced stability.
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Synthesis of functionalized few layer graphene via electrochemical expansion
… attention for its potential application in next-generation electronic devices, composite materials, and energy storage devices. This attention is a result of its desirable and intriguing electrical, mechanical, and chemical properties. However, mass production of high-quality, …
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Surface and interface characterisation of high-k dielectric materials on silicon and III-V semiconductor substrates
… importance to the development of the next generation of high speed semiconductor devices. This thesis investigates the deposition and characterisation of a range of candidate high-k materials on both silicon and III-V (InGaAs and InP) semiconductor substrates, with the focus on interface …
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Study of Copper Nanowires With Five-Twinned Structure Grown by Chemical Vapor Deposition and Their Applications
… The internal stress could be relaxed by the defect generation in one of the five subcrystals and the displacement of the pentagonal axis of the nanowire. The growth mechanism for the 1-dimensional CuNW-growth is proposed to be the passivation by the phosphite, acting as a capping agent …
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Photoluminescence from Defects in Two-Dimensional Transition Metal Dichalcogenides
Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen vacancies significantly affect their properties. In this thesis, I provide a reproducible and facile strategy to rationally induce chalcogen vacancies in monolayer MoS<sub>2</sub> by annealing at 600 °C in an …
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Exploring Atom-Light Scattering in the Quantum Regime
… quantum phases at thermal equilibrium or defect generation in dynamical ramps. For atoms released from the optical lattice, I demonstrate that light scattering can read out the quantum statistical information and initial density correlations hidden in the interference of atomic …
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Growth defects in CrN/NbN coatings deposited by HIPIMS/UBM techniques
… imperfections even though the overall number of defects can be significantly lower compared to, for example, arc deposited coatings of similar thickness. Defects can degrade the coating performance thus any kind of defect is undesirable. To better understand the nature of these imperfections and …
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Size dependence of mechanical responses of materials in small-volume structures
… relations to atomistic descriptions of defect generation. An analytical model based on the generation of an array of dislocation loops is used to rationalize the film-thickness and grain-size effect on the stress evolution of thin metallic films on thick substrates. The consequence of …
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Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
… the phenomena to dehydrogenation of pre-existing defects in GaN channel by hot electrons. Under high positive gate bias, defect generation in the AIN interlayer due to high electric field across AIN has proven to be responsible for the observed gate leakage current increase. Also, under high-power …
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Modeling rough energy landscapes in defected condensed matter
… and theoretical investigation of the behavior of defected condensed matter and its evolution over long time scales. The thesis provides original contributions to the methodology used for simulating the slow evolution of complex condensed matter, as well as applications to three problems: hydrogen …
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Non-equilibrium dynamics of ultracold atoms in optical lattices
… process analogous to the mechanism for defect generation in non-equilibrium classical phase transitions. This experiment constitutes the first observation of the Kibble-Zurek mechanism in a quantum quench. We have reported our findings in Ref. [1]. In a second experiment, published in …
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Statistics, geometry, and mechanical states in cellular matter
… genetic mutations disrupt regulation and lead to generation of topological defects. With conventional order measures in statistical mechanics, we demonstrate that translational order disruption in Drosophila eye is sufficient for the onset of topological disorder. The statistical model based on …
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Characterization and control of non-stoichiometry in Pr₀.₁Ce₀.₉O₂-[d̳e̳l̳t̳a̳] thin films : correlation with SOFC electrode performance
… ionicelectronic conductivity, well described defect equilibria and transport properties, and stability over with limits of temperature and oxygen partial pressure. PrCel-02-6 (PCO) thin films with x=0.01, 0.10 and 0.20 were prepared as thin film cathodes by pulsed laser deposition onto single …
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Reliability Studies of TiN/Hf-Silicate Based Gate Stacks
… leading candidates to be included into the first generation of high-[Kappa] gate stacks in nano-scale CMOS technology because of their distinct advantages as far as thermal stability, leakage characteristics, threshold stability and low mobility degradation are concerned. Their reliability, which …
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First-Principles Study of Band Alignment and Electronic Structure at Metal/Oxide Interfaces: An Investigation of Dielectric Breakdown
… breakdown. It has been proposed that point defects, current leakages, impurity diffusions, etc. all contribute to the change of oxide chemical composition and ultimately lead to the dielectric breakdown. However, the conclusive cause and a clear understanding of the entire process of …
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Electron beam processing and spectroscopic characterisation of 2D materials and novel nanostructures
… nanostructures, selective surface termination, defect generation and real-time imaging of chemical reaction fronts. The aim of this project was to elucidate experimentally the fundamental processes that govern the chemical reactions occurring during FEBIP. The first study outlined in this thesis …
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MOVPE metamorphic lasers and nanostructures engineering at telecom wavelengths
… the correlation between epilayer thickness and defect generation and, importantly, demonstrate that the limiting factors introduced by surface instabilities during epitaxy can be managed by an innovative design. The bottom and the upper cladding are built as a combination of AlInGaAs and InGaP …
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