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Showing 1 to 8 of 8 for “"crystallographic defects"”.

  1. Exploration of crystallographic defects in topological insulator metamaterials

    Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2023-12-01

    uiuc Repository record for Exploration of crystallographic defects in topological insulator metamaterials (opens in a new tab)

  2. Pulsed laser deposition of superconducting Sr2RuO4 thin-films and the role of crystallographic defects

    … to achieve in thin-films as structural defects and impurities sensitively annihilate the superconducting state. Despite a handful of successful results on the growth of superconducting SRO214 thin-films by molecular beam epitaxy (MBE), reproducible growth by pulsed laser deposition (PLD) …

    cambridge Repository record for Pulsed laser deposition of superconducting Sr2RuO4 thin-films and the role of crystallographic defects (opens in a new tab)

  3. Heterogeneous Redox Chemistries in Layered Oxide Materials for Lithium-Ion Batteries

    … oxygen release, and chemomechanical breakdown. Crystallographic defects, such as dislocations and grain boundaries, are rich in battery materials. These crystallographic defects change the local lithium-ion diffusivity and have a dramatic effect on the redox reactions. To date, there is still a …

    vt Repository record for Heterogeneous Redox Chemistries in Layered Oxide Materials for Lithium-Ion Batteries (opens in a new tab)

  4. On the spheroidal graphite growth and the austenite solidification in ductile irons

    … in the spheroidal graphite particles. Possible crystallographic defects associated with hexagonal-rhombohedral structure transition were discussed. Schematic models for introducing tilt angles to the graphite lattice with basal plane tilt boundaries were constructed"--Abstract, page iv.</p>

    must-thes Repository record for On the spheroidal graphite growth and the austenite solidification in ductile irons (opens in a new tab)

  5. Computation and application of the lattice Green function to dislocations in metals, intermetallics, and semiconductors

    Dislocations are fundamental crystallographic defects that play key roles in determining material properties. The first step to understanding dislocations and being able to model them accurately is knowing their geometry. While the far-field geometry of a dislocation can be well described by …

    uiuc Repository record for Computation and application of the lattice Green function to dislocations in metals, intermetallics, and semiconductors (opens in a new tab)

  6. Tomographic reconstruction and sub-surface imaging of porous nitride semiconductors

    … pore morphology changes driven by variations in crystallographic defect density or type, as well as electrochemical etching conditions, establishing its utility as an accessible, routine characterisation technique alongside cross-sectional SEM. Our sub-surface BSE-SEM imaging technique was …

    cambridge Repository record for Tomographic reconstruction and sub-surface imaging of porous nitride semiconductors (opens in a new tab)

  7. Synthesis, Functionalization, and Characterization of Dominant UV Emitting Upconverting Nanocrystals and Absolute Quantum Yield and Power Dependence Metrics for the Elucidation of Upconversion Mechanisms

    … activator pairs and the development of numerous crystallographic, co-dopant, morphological, and/or surface-appended optimizations to these materials have given rise to a novel class of nanomaterials, with unique photophysical properties that have direct import into light-based activation of …

    duke Repository record for Synthesis, Functionalization, and Characterization of Dominant UV Emitting Upconverting Nanocrystals and Absolute Quantum Yield and Power Dependence Metrics for the Elucidation of Upconversion Mechanisms (opens in a new tab)

  8. First-principles investigations of transition metal hyperdoped silicon and germanium for intermediate band engineering

    … to the infrared regime. Recently, introducing defects at large concentrations several orders of magnitude larger than the equilibrium solubility limit has emerged as an approach to engineering the optical response of silicon. Specifically my thesis research addresses three aspects of hyperdoped …

    uiuc Repository record for First-principles investigations of transition metal hyperdoped silicon and germanium for intermediate band engineering (opens in a new tab)