Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 15 of 15 for “"critical electric field"”.
-
Characterization, Reliability and Packaging for 300 °C MOSFET
… its silicon (Si) counterparts due to its higher critical electric field (E-field) and higher thermal conductivity. Using SiC, MOSFETs with a theoretical high temperature operation and reliability is achievable. However, current bottlenecks in high temperature SiC MOSFETs lie within the …
-
Development of vertical bulk gallium nitride power devices
… due to its outstanding properties, such as high critical electric field and large bandgap. Despite its superior intrinsic properties, fabrication processes and technology for vertical GaN power electronics is still not as mature as in conventional materials. This thesis covers three aspects of …
-
ΘΕΩΡΗΤΙΚΗ ΜΕΛΕΤΗ ΤΗΣ ΣΥΜΠΕΡΙΦΟΡΑΣ ΗΛΕΚΤΡΙΚΗΣ ΕΚΚΕΝΩΣΗΣ ΣΕ ΜΙΚΡΑ ΔΙΑΚΕΝΑ
… TORRS) AND LOW (50 TORRS) PRESSURE. THE APPLIED FIELD IS DETERMINED BY THE ELECTRODE GEOMETRY AND THE EVOLUTION OF POSITIVE AND NEGATIVE IONS AND ELECTRONS ISDESCRIBED BY ONE-DIMENSIONAL CONTINUITY EQUATION IN CONJUCTION WITH THE POISSON'S EQUATIONS WHICH ARE RESOLVED BY AN ACCURATE NUMERICAL …
-
Processing technology for high quality AlGaN/GaN MOSHEMT interfaces
… like the high electron mobility, large critical electric field and large carrier concentration. For power switching applications, it is necessary to lower gate leakage by introducing a gate insulator between the gate metal and the AIGaN barrier. This thesis focuses on studying the impact …
-
MODELLING AND DESIGN OF DIAMOND POWER SEMICONDUCTOR DEVICES
… high hole mobility (>2000 cm2/V∙s), high critical electric field (>10 MV/cm), and large bandgap (5.47 eV), Diamond has overwhelming advantages over Silicon and wide bandgap semiconductors (WBG) for ultra-high voltage and high temperature applications (>3 kV and >450 K, respectively). …
-
Hybrid-gate deep depletion mosfet high-k zro2/diamond-based power devices
… is the key to the efficient low-carbon electrical energy production and distribution for our future energy system, eliminating the auxiliary systems and reducing the losses. Despite silicon is a well-established material it presents narrow and inadequate electrical characteristics to be …
-
Electrohydrodynamic interactions of colloidal particles undergoing Quincke rotation
… denotes the spontaneous rotation of dielectric particles immersed in a slightly dielectric liquid when subjected to a high enough DC electric field. Quincke rotation occurs when the charge relaxation time of the particles is greater than that of the fluid medium, causing the particles …
-
GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications
… a very promising material for use in the field of power devices as its application in power systems would result in a significant increase in the power density, reduced power losses, and the potential to operate at high frequencies. The wide bandgap of the material allows a high critical …
-
Device-level thermal analysis of GaN-based electronics
… and high frequency electronics. The excellent electrical properties of GaN and its related alloys (high critical electric field, carrier concentration, and carrier mobility) have enabled record-breaking performance of GaN-based high electron mobility transistors (HEMTs) for radio-frequency (RF) …
-
Gallium nitride high electron mobility transistors in chip scale packaging: evaluation of performance in radio frequency power amplifiers and thermomechanical reliability characterization
… counterparts, such as a higher energy bandgap, critical electric field, and saturated electron drift velocity. These parameters translate into devices which operate at higher frequency, voltage, and efficiency than comparable Si devices, and have been utilized in varying degrees for power …
-
Investigation of Threshold Voltage Instability in Normally Off GaN on Si HEMT
Wide bandgap semiconductor by virtue of its high critical electric field, low intrinsic carrier concentration, high thermal conductivity is considered a promising material for enabling high density power conversion systems with a smaller form factor. Gallium Nitride (GaN) in particular, with its …
-
Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes
… A benefit of this wide-bandgap is the high critical electric field of Ga2O3, which is estimated to be from 5 MV/cm to 9 MV/cm. This allows a higher Baliga’s figure of merit (BFOM), i.e., unipolar Ga2O3 devices potentially possess a smaller specific on-resistance (Ron,sp) as compared to the …
-
Junction Based Gallium Nitride Power Devices
… including consumer electronics, data centers, electric vehicles, and power grids, etc. The key components of power electronic circuits are power semiconductor devices including diodes and transistors, which determine the performance of power electronics circuits. Traditional power devices are …
-
Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
… concentration. Another benefit is the high critical electric field (Ec), which is estimated to be from 6 MV/cm to 8 MV/cm in Ga2O3. This allows for a superior Baliga's figure of merit (BFOM) of unipolar Ga2O3 power devices, i.e., they potentially can achieve a smaller specific on-resistance …
-
High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
The objective of this research is the design and development of ultra-low-leakage mixed-conduction gallium nitride (GaN) diodes with reverse blocking voltage approaching parallel-plane behavior. Although GaN is a promising wide bandgap (WBG) material, experimentally reported GaN power devices …