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Showing 1 to 10 of 10 for “"copper interconnect"”.
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Framework for characterization of copper interconnect in damascene CMP processes
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science; and, Thesis (B.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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The electromigration drift velocity and the reliability of dual-damascene copper interconnect trees
Cu has replaced Al as the interconnect metal of choice for high performance Si-based integrated circuits. Its electromigration behavior must be quantified and an experimental basis for a circuit-level reliability assessment is needed. Experiments on straight two-terminal via-to-via Cu …
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Process Evaluation and Characterization of Tungsten Nitride as a Diffusion Barrier for Copper Interconnect Technology
The integration of copper (Cu) and dielectric materials has been outlined in the International Technology Roadmap for Semiconductors (ITRS) as a critical goal for future microelectronic devices. A necessity toward achieving this goal is the development of diffusion barriers that resolve the Cu and …
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Growth and chemical characterisation studies of Mn silicate barrier layers on SiO2 and CDO
… of manganese silicate (MnSiO3) as a possible copper interconnect diffusion barrier layer on both a 5.4 nm thick thermally grown SiO2 and a low dielectric constant carbon doped oxide (CDO), with the focus of understanding the barrier formation process. The self forming nature of this diffusion …
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In-situ backplane inspection of fiber optic ferrules
… to have hundreds and thousands of optical interconnects among components. An optical interconnect attains a bandwidth-distance product as high as 90 GHz.km, about 200 times higher than can be attained by a copper interconnect. But defects (such as dust or scratches) as small as 1 micron on …
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Electrical characterization of plasma-enhanced Cvd silicon nitride dielectric on copper
… process is introduced and integrated in a Copper Interconnect technology, whose smallest feature size is 0.18mum process, which has good yield, reliability and repeatability. The MIM uses a one-photomask process and hence is termed as the Low-cost-integration (LCI) MIM. The LCI MIM uses …
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CMOS circuits for VCSEL-based optical IO
Electrical IO is becoming limited by copper interconnect channel losses that depend on frequency and distance. Package-to-package optical interconnects see negligible frequency-dependent channel losses, but data rates are limited by the intrinsic optical dynamics and electrical parasitics of the …
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Characterization and modeling of pattern dependencies in copper interconnects for integrated circuits
Copper metallization has emerged as the leading interconnect technology for deep sub-micron features, where electroplating and chemical mechanical polish (CMP) processes have a vital role in the fabrication of integrated circuits. The processes both suffer from a similar problem: the copper …
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Deposition and properties of Co- and Ru-based ultra-thin films
Future copper interconnect systems will require replacement of the materials that currently comprise both the liner layer(s) and the capping layer. Ruthenium has previously been considered as a material that could function as a single material liner, however its poor ability to prevent copper …
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Chemical vapor deposition of thin films for ULSI interconnect metallization
We have studied the kinetics of copper chemical vapor deposition (CVD) for interconnect metallization using solution delivery of Cu(hfac)2 (Cu(II) hexafluoroacetyl-acetonate) dissolved in isopropanol. We observe a growth rate of 17.7 „b 1.5 nm/min at reference conditions of 300„aC substrate …