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Showing 1 to 10 of 10 for “"convergent beam electron diffraction"”.
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Measurement of Lattice Strain and Relaxation Effects in Strained Silicon Using X-ray Diffraction and Convergent Beam Electron Diffraction
… better process control. In this research, x-ray diffraction and convergent beam electron diffraction have been utilized to quantify the strain behavior of simple and complex strained silicon-based systems. While the stress relaxation caused by thinning of the strained structures to electron …
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Investigation of lattice mismatch in rhenium containing nickel-base superalloys
… used for measuring lattice mismatch were x-ray diffraction, convergent beam electron diffraction and interface dislocation analysis. Additionally, the electron microprobe was used to examine bulk homogeneity and a scanning transmission electron microscope equipped with a Kevex X-ray EDS system …
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TEM-Untersuchungen zum Gefüge und zu mechanischen Spannungen in Metallisierungen für SAW-Bauelemente
… is a challenge for the future. The CBED (convergent beam electron diffraction) technique has shown the best resolution, however, it can only be applied to TEM lamellas. The aim of this work was to measure the stress within the SAW metallizations by using the CBED method. With it, we could …
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Characterization of novel microstructures in Al-Fe-V-Si and Al-Fe-V-Si-Y alloys processed at intermediate cooling rates
… Al-Fe-V-Si (RS8009) alloy. In addition, convergent beam electron diffraction (CBED) and selected area electron diffraction (SAD) were used to characterize a competing intermetallic phase, namely, a hexagonal phase identified as h-AlFeSi (P6/mmm space group with a = 2.45 nm c = 1.25 nm) …
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Quantitative High-angle Annular Dark Field Scanning Transmission To Electron Microscopy For Materials Science
Scanning transmission electron microscopy (STEM) has been widely used for characterization of materials; to identify micro- and nano-structures within a sample and to analyze crystal and defect structures. High-angle annular dark field (HAADF) STEM imaging using atomic number (Z) contrast has …
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Nanoscale quantification of stress and strain in III-V semiconducting nanostructures
… platform for the realization of advanced optoelectronic devices due to their superior intrinsic materials properties including direct band gap energies that span the visible light spectrum and high carrier mobilities. Additionally, the inherently high surface-to-volume ratio of nanostructures …
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Determination of local crystal symmetry in complex, multielement, ferroelectric perovskites and alloys
… multi-element, crystals by developing scanning convergent beam electron diffraction (SCBED) based techniques. The applications of SCBED characterization demonstrated here include: ferroelectric BaTiO3 single crystal, relaxor-ferroelectric (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (x=0.08) single crystal, …
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Processing of aluminium and titanium alloys by severe plastic deformation
… totally homogeneous.<br/>A series of [114] convergent beam electron diffraction (CBED) zone axis patterns were obtained at 148.7 kV with a 20 nm diameter electron probe from dislocation-free regions close to and away from the grain boundaries in the billets processed by ECAP through two and …
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Local symmetry and polarization in relaxor-based ferroelectric crystals
Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2013-05-24T22:02:27Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Kim_KyouHyun.pdf: 4556380 bytes, checksum: 3dac9ee508db17f0bac12ef97b4d87d3 (MD5)