Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 10 of 10 for “"conductive filament"”.
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Nonvolatile and Volatile Resistive Switching - Characterization, Modeling, Memristive Subcircuits
… extending Moore\'s law in the next decade. The conductive bridge random access memory (CBRAM) is one of the most promising candidates. CBRAM shows unique nanoionics-based filamentary switching mechanism. Compared to flash memory, the advantages of CBRAM include excellent scalability, low power …
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Formation and Rupture of Nanofilaments in Metal/TaOx/Metal Resistive Switches
There is an increased interest in the Conductive Bridge Random Access Memory (CBRAM) and Resistive Random Access Memory (RRAM) because of their excellent scaling potential, low power consumption, high switching speed, good retention and endurance properties. Although, various mechanisms have been …
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The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices
… very similar FORM, SET and RESET voltages for Cu conductive filaments. However, for the oxygen vacancy (VO) filament the Co device has a significant smaller FORM, SET and RESET voltages of VO filament, which can be partly attributed to the work function difference between Pt and Co of 1.35 V and …
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Characterisation of Novel Resistive Switching Memory Devices
… as the rupture/restoration of defect-formed conductive filament (CF) or defect profile modulation, for filamentary and non-filamentary devices respectively. However, details of the underlying microscopic behaviour of the resistive switching in RRAM are still largely missing. In this thesis, a …
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A Schottky-to-Ohmic Transition in Epitaxial Ferroelectric Hafnia Devices
… current transport occurred through a localised conductive filament. A detailed analysis of the inter- face chemistry suggested the importance of precisely designed oxygen scavenging at both interfaces to stabilise the SOT. Furthermore, interface stoichiometry changes were observed during …
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Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process
In an effort to lower interconnect time delays and power dissipation in highly integrated logic and memory nanoelectronic products, numerous changes in the materials and processes utilized to fabricate the interconnect have been made in the past decade. Chief among these changes has been the …
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Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform
… very recently deployed commercially, and 2) the filamentary conductive bridge RAM (CBRAM) which holds the promise of even better scaling potential, less power consumption, and faster access times. This thesis focuses on several aspects of the CBRAM technology. CBRAM devices are based on …
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Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array
… different formation, shape and rupture of the conductive filament. The inferior switching properties of the Ru device have been attributed to the substantially degraded inertness properties of the Ru electrode as a stopping barrier for Cu as compared to the Pt electrode. To study this …
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Mechanisms, Conditions and Applications of Filament Formation and Rupture in Resistive Memories
… and applications of oxygen vacancy (Vo) filament formation in resistive memories. By studying the behavior of conductive Vo nanofilaments in several metal/oxide/metal resistive devices of various thicknesses of oxides, a resulting model supported by the data postulates that there are two …
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Analysis of Memristor Hysteretic Systems: A Hybrid Coupled Model with emphasis on Pinching/Degrading Behavior
This thesis proposes a novel model that accurately captures the asymmetric hysteretic behavior of memristive devices exhibiting self-crossing hysteresis loops. The proposed model combines the Bouc-Wen Baber-Noori model with other non-linear elements in the resistive switching process. Existing …