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Showing 1 to 20 of 69 for “"compound semiconductors"”.
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Photo-hall studies of compound semiconductors
The III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and m1crowave device applications. Temperature dependent photo-Hall effect measurements have been made on the high purity compound semiconductors GaAs, InP and a ternary alloy In0 . 53Ga0 . 47As. The …
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Photo-Hall studies of compound semiconductors
The III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave device applications. Temperature dependent photo-Hall effect measurements have been made on the high purity compound semiconductors GaAs, InP and a ternary alloy …
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Surface and interface studies of compound semiconductors
The geometric and electronic properties of compound semiconductor surfaces and interfaces were studied using experimental techniques such as electron and x-ray diffraction, Auger spectroscopy, synchrotron photoemission, and scanning tunneling microscopy. Some of the surface and interfacial …
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Lattice mismatched compound semiconductors and devices on silicon
III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and the degradation of IIIV MOSFET channel mobility remain two major challenges for …
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Growth and characterization of III-V compound semiconductors
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Optical characterization of compound semiconductors using photoconductivity and photoreflectance
… semiconductor materials. The ternary Cd1--xZnxTe compound was studied to achieve fine control over its composition to provide lattice-matched substrates for the growth of Hg1--xCdxTe which is used in infrared detectors. Photoreflectance spectroscopy, capable of accurate estimations of energy …
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An Experimental Study of Impact Ionization in Compound Semiconductors
… for the understanding of high field transport in semiconductors. Previous experimental data on impact ionization coefficients have indicated that the bandstructure can have a strong influence on the impact ionization process. In this thesis, the effects of crystallographic orientation, composition …
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Hyperthermal molecular beam dry etching of III-V compound semiconductors
Includes bibliographical references (p. 181-186).
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Etching and chemomechanical polishing of compound semiconductors using halogen-based reagents
The reactions of dichlorine and dibromine on compound semiconductors follow a pattern of halogenation of the substrate surface, followed by solvation of the halogenated products and removal of the secondary products in the etchant solutions. The reactions of hypochlorite and hydrogen peroxide …
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Compliant Epitaxy of Iii-V Compound Semiconductors for Optoelectronic Device Applications
The second technique uses a novel approach: very-low temperature molecular beam epitaxy (VLT-MBE) which involves growth of amorphous and polycrystalline materials. Using GaP and laterally oxidized AlAs materials, substrate independent DBRs were fabricated at wavelengths in both the visible …
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High-purity epitaxial growth and characterization of III-V compound semiconductors
… of epitaxial indium gallium arsenide phosphide compound semiconductor films are described. Methods have been developed to improve the purity of both InP and GaAs and to better assess the crystalline homogeneity of the InGaAsP alloy system.
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Precise Characterization and Investigation of Laser Cooling in III-V Compound Semiconductors
… issues associated with laser cooling of III-V compound semiconductors, in particular GaAs double heterostructures (DHS), are theoretically and experimentally investigated. This research addresses the key concepts of external quantum efficiency (EQE) and parasitic background absorption in a …
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The application of low dose SIMS to surface studies on compound semiconductors
… is assessed as a surface analysis technique for compound semiconductor surfaces. Two types of surface analysis problems are addressed - the use of SIMS to monitor cleaning of GaAs substrates in UHV for MBE growth and adsorption studies - and the use of SIMS in studying low coverage oxygen …
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Long wavelength infrared detectors utilizing multiple quantum wells in III-V compound semiconductors
Data are presented on various infrared detectors based on multiple GaAs/AlGaAs quantum wells. Due to the great flexibility in the growth, dimensions, and composition of these structures, the electrical and optical characteristics of the photodetector may be significantly altered. This investigation …
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A theoretical study of surface kinetic processes in the Mbe growth of compound semiconductors
The surface kinetics processes in the molecular beam epitaxy (MBE) growth of GaAs (100) and the MBE doping kinetics are studied theoretically, using a stochastic model which is based on the master equation approach and random distribution approximation. The kinetic processes included in the model …
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Photoluminescence studies of hydrogenation and other defect-related processes in III-V compound semiconductors
… processes in high-purity GaAs and related III-V compounds, are reported. A new effect of light-induced reactivation (LIR) or acceptors in p-type hydrogenated GaAs has been observed. This process is virtually athermal for weakly passivated acceptors such as Mg. Reactivation is persistent at …
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Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors
… primary challenges to date in the field of III-V semiconductors has been the observation of high levels of defect densities at the high-k/III-V interface, which prevents surface inversion of the semiconductor. The work presented in this PhD thesis details the characterization of MOS devices …
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Investigation of the effects of low energy high dose ion bombardment in metals and compound semiconductors
… molecular ion beam bombardment on metals and compound semiconductors has been studied, with the aim to investigate at the effects of ion and target properties. For this purpose, nitrogen ion implantation in aluminium, iron, copper, gold, GaAs and AIGaAs is studied using XPS and Angle Resolve …
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Two-dimensional material based layer transfer of thin film devices
… However, there exists a plethora of compound semiconductors that offer unique electronic properties that can enable high performance devices superior to silicon for a wide range of device applications. Unfortunately, compound semiconductors industries have seen limited adoption in …
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