Global ETD Search
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Showing 1 to 1 of 1 for “"coalescence boundaries"”.
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Development of Multi-Microscopy Techniques for the Characterisation of Nitride Semiconductors
… the possible role of late-forming GaN island coalescence boundaries (CBs) in TD generation was investigated. Silicon-doped marker layers, scanning capacitance microscopy and SEM-CL were used together to identify the latest coalescing boundaries on cleaved cross- sections of fully-grown …